Large area fabrication of vertical silicon nanowire arrays by silver-assisted single-step chemical etching and their formation kinetics

2014 ◽  
Vol 25 (17) ◽  
pp. 175601 ◽  
Author(s):  
Sanjay K Srivastava ◽  
Dinesh Kumar ◽  
S W Schmitt ◽  
K N Sood ◽  
S H Christiansen ◽  
...  
2014 ◽  
Vol 24 (1) ◽  
pp. 105-105 ◽  
Author(s):  
Junghoon Yeom ◽  
Daniel Ratchford ◽  
Christopher R. Field ◽  
Todd H. Brintlinger ◽  
Pehr E. Pehrsson

2012 ◽  
Vol 21 ◽  
pp. 109-115 ◽  
Author(s):  
S. Naama ◽  
T. Hadjersi ◽  
G. Nezzal ◽  
L. Guerbous

One-step metal-assisted electroless chemical etching of p-type silicon substrate in NH4HF2/AgNO3 solution was investigated. The effect of different etching parameters including etching time, temperature, AgNO3 concentration and NH4HF2 concentration were investigated. The etched layers formed were investigated by scanning electron microscopy (SEM) and Photoluminescence. It was found that the etched layer was formed by well-aligned silicon nanowires. It is noted that their density and length strongly depend on etching parameters. Room temperature photoluminescence (PL) from etched layer was observed. It was observed that PL peak intensity increases significantly with AgNO3 concentration.


2020 ◽  
Vol 12 (11) ◽  
pp. 13140-13147 ◽  
Author(s):  
Fedja J. Wendisch ◽  
Mehri Abazari ◽  
Hossein Mahdavi ◽  
Marcel Rey ◽  
Nicolas Vogel ◽  
...  

2011 ◽  
Vol 194-196 ◽  
pp. 598-601
Author(s):  
Xuan Liu ◽  
Li Jie Zhao ◽  
Ping Feng

Electroless metal deposition is a simple, low-cost and effective method for fabricating silicon nanowire arrays and has been used widely in micro electromechanical industry. In this paper, large-area silicon nanowire arrays are prepared successfully with mixed AgNO3and HF solution by this method at normal temperature and pressure. It has been proved the best equality of silicon nanowires can be obtained at the concentration ratio of 0.02 mol/l: 5mol/l for AgNO3and HF and 1h reaction time. The influence of nano metal particles on the growth, the wire diameter, the distribution and the array of silicon nanowires are analyzed. Experimental results show the distribution and wire diameter of silicon nanowires can be controlled effectively by nano metal particles deposited on silicon wafers. The length of silicon nanowires increases with the reaction time and the average growth velocity is predicted to be 0.5~0.7μm/min. The equality of silicon nanowires with nano Au particles is better than those with nano Pt particles. The reaction mechanism of preparing large-area silicon nanowire arrays is analyzed as the result of the deoxidization of silver ion and the removal of the oxidized silicon solution by reacting with HF.


2014 ◽  
Vol 2 (30) ◽  
pp. 4894-4900 ◽  
Author(s):  
Merve Selen Akin ◽  
Mehmet Yilmaz ◽  
Esra Babur ◽  
Betul Ozdemir ◽  
Hakan Erdogan ◽  
...  

Bio-inspired polydopamine coating has been demonstrated to control the size and density of silver nanoparticles on 3-D SiNW arrays for practical SERS applications.


2013 ◽  
Vol 24 (1) ◽  
pp. 106-116 ◽  
Author(s):  
Junghoon Yeom ◽  
Daniel Ratchford ◽  
Christopher R. Field ◽  
Todd H. Brintlinger ◽  
Pehr E. Pehrsson

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