Combinatorial Synthesis and Evaluation on Thermoelectric Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.687.591 ◽

2011 ◽

Vol 687 ◽

pp. 591-595

Author(s):

Qun Jiao Wang ◽

Min Xu

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Low Cost ◽

Pulsed Laser ◽

Combinatorial Synthesis ◽

Laser Deposition ◽

Synthesis And Characterization ◽

X Ray ◽

New Material

Combinatorial technology is a powerful tool for new material exploration. Some new combinatorial technologies, such as combinatorial laser molecular beam epitaxy (CLMBE) and combinatorial pulsed laser deposition (CPLD), were introduced in the paper. La1-xCexVO3 (0≤x≤1) composition-spread films were fabricated successfully by CPLD, while their thermoelectric properties and structures were evaluated by the multi-channel thermoelectric measurement system and concurrent X-ray analysis respectively. Combinatorial technologies are proving to be an efficient, low-cost tool in synthesis and characterization of thermoelectric composition-spread films.

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Fabrication and Thermoelectricity of (Ca1-XAX)3Co4O9 Composition-Spread Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.687.75 ◽

2011 ◽

Vol 687 ◽

pp. 75-79

Author(s):

Qun Jiao Wang

Keyword(s):

Power Factor ◽

Measurement System ◽

Low Cost ◽

Pulsed Laser ◽

Laser Deposition ◽

Synthesis And Characterization ◽

Film Library ◽

X Ray ◽

Seebeck Coefficients

Combinatorial pulsed laser deposition (CPLD) is proving to be an efficient, low-cost tool in synthesis and characterization of thermoelectric composition-spread films. With the help of CPLD, (Ca1-xAx)3Co4O9 composition-spread films were fabricated successfully on TiO2 (100) substrate , and their thermoelectric (TE) properties and structure were evaluated by the multi-channel thermoelectric measurement system and concurrent X-ray analysis respectively. The largest power factor in (Ca1-xSrx)3Co4O9 film library was achieved as 1.67µW/cmK2. The influence of substitution on TE properties was investigated by doping different ions into Ca3Co4O9. By comparing Seebeck coefficients and conductivities of the films, it can be drawn that the substitution ions with smaller size are potential candidates for good TE properties. The dependence of TE properties of (Ca1-xSrx)3Co4O9 films on temperature shows that good TE properties can be achieved when temperature is above 150K.

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Synthesis and Characterization of Cu2ZnSnS4 Thin Films Obtained by Combined Magnetron Sputtering and Pulsed Laser Deposition

Nanomaterials ◽

10.3390/nano11092403 ◽

2021 ◽

Vol 11 (9) ◽

pp. 2403

Author(s):

Mohamed-Yassine Zaki ◽

Florinel Sava ◽

Angel-Theodor Buruiana ◽

Iosif-Daniel Simandan ◽

Nicu Becherescu ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Pulsed Laser Deposition ◽

Single Phase ◽

Stoichiometric Composition ◽

Pulsed Laser ◽

Laser Deposition ◽

Synthesis And Characterization ◽

X Ray

Cu2ZnSnS4 (CZTS) is a complex quaternary material, and obtaining a single-phase CZTS with no secondary phases is known to be challenging and dependent on the production technique. This work involves the synthesis and characterization of CZTS absorber layers for solar cells. Thin films were deposited on Si and glass substrates by a combined magnetron sputtering (MS) and pulsed laser deposition (PLD) hybrid system, followed by annealing without and with sulfur powder at 500 °C under argon (Ar) flow. Three different Cu2S, SnS2, and ZnS targets were used each time, employing a different target for PLD and the two others for MS. The effect of the different target arrangements and the role of annealing and/or sulfurization treatment were investigated. The characterization of the absorber films was performed by grazing incidence X-ray diffraction (GIXRD), X-ray reflectometry (XRR), Raman spectroscopy, scanning electron microscopy, and regular transmission spectroscopy. The film with ZnS deposited by PLD and SnS2 and Cu2S by MS was found to be the best for obtaining a single CZTS phase, with uniform surface morphology, a nearly stoichiometric composition, and an optimal band gap of 1.40 eV. These results show that a new method that combines the advantages of both MS and PLD techniques was successfully used to obtain single-phase Cu2ZnSnS4 films for solar cell applications.

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