Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate
2012 ◽
Vol 717-720
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pp. 383-386
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Keyword(s):
Shallow defects, which were induced by mechanical treatment, on 4H-SiC wafers were investigated. The density and the distribution in depth of shallow defects on the wafers were depended on wafer venders. Most of serious defects such as dislocation array (DA), triangular stacking fault (TRSF) and triangular defect (TRD) in epitaxial film were demonstrated to be caused by shallow dislocations on the surface of the wafers. Revised mechanical polish can reduce the densities of DA, TRSF and TRD in epitaxial film.
Keyword(s):
2001 ◽
Vol 33
(2)
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pp. 105-120
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1977 ◽
Vol 35
◽
pp. 126-129
1977 ◽
Vol 35
◽
pp. 124-125
Keyword(s):
1991 ◽
Vol 49
◽
pp. 688-689
Keyword(s):
1987 ◽
Vol 45
◽
pp. 318-319
Keyword(s):
1980 ◽
Vol 38
◽
pp. 350-351