Charge-Carrier Transport in Large-Area Epitaxial Graphene

2017 ◽  
Vol 529 (11) ◽  
pp. 1700048 ◽  
Author(s):  
Ferdinand Kisslinger ◽  
Matthias Popp ◽  
Johannes Jobst ◽  
Sam Shallcross ◽  
Heiko B. Weber
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Epitaxial Graphene ◽  
Charge Carrier Transport ◽  
Large Area

Electrical Characterization of the Graphene-SiC Heterojunction

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Charge Carrier ◽  
Graphene Sheet ◽  
Carrier Transport ◽  
Electrical Characterization ◽  
Epitaxial Graphene ◽  
Charge Carrier Transport ◽  
Semiconductor System ◽  
Significant Research

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

Preliminary Results on Large Area X-ray a-SiC:H Multilayer Detectors with Optically Addressed Readout

2007 ◽  
Vol 989 ◽  
Author(s):  
Manuela Vieira ◽  
Yuri Vygranenko ◽  
Miguel Fernandes ◽  
Paula Louro ◽  
Pedro Sanguino ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Charge Carrier ◽  
Carrier Transport ◽  
Image Sensor ◽  
Semiconductor Layer ◽  
Charge Carrier Transport ◽  
Large Area ◽  
X Ray ◽  
Switching Mode ◽  
Area X

AbstractThis paper investigates a feasibility of using a large area image sensor with an optically addressed readout for medical X-ray diagnostic imaging. A device prototype comprises a multilayer glass/ZnO:Al/p (a-SiC:H)/i (a-Si:H)/ n (a-SiC:H)/ i(a-Si:H)/p (a-SiC:H)/ a SiNx/ITO structure coupled to a scintillator layer. Here, the p-i-n-i-p structure works in both sensing and switching modes depending on the biasing conditions. A numerical simulation is used to optimize the semiconductor layer thicknesses in order to achieve a photocurrent matching between back-to-back diodes in switching mode. The charge carrier transport within the p-i-n-i-p structure is also analyzed under different electric and optical biasing conditions. A physical model supports the results.

Limits of Charge Carrier Transport in Halide Perovskites Revealed by Optical-Pump Terahertz-Probe Spectroscopy

2019 ◽  
Author(s):  
Hannes Hempel ◽  
Andrei Petsiu ◽  
Martin Stolterfoht ◽  
Pascal Becker ◽  
Dieter Neher ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Optical Pump ◽  
Halide Perovskites ◽  
Probe Spectroscopy

scholarly journals Impact of Tortuosity on Charge-Carrier Transport in Organic Bulk Heterojunction Blends

2017 ◽  
Vol 8 (5) ◽  
Author(s):  
Michael C. Heiber ◽  
Klaus Kister ◽  
Andreas Baumann ◽  
Vladimir Dyakonov ◽  
Carsten Deibel ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Bulk Heterojunction ◽  
Charge Carrier Transport

Charge Carrier Transport in Phenazine

1979 ◽  
Vol 53 (3-4) ◽  
pp. 271-280 ◽  
Author(s):  
S. C. Mathur ◽  
B. Kumar ◽  
Keya Roy
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carrier Transport

Glass transition in charge carrier transport phenomena of amorphous photoconductive polymers

1984 ◽  
Vol 49 (6) ◽  
pp. 575-577 ◽  
Author(s):  
M. Fujino ◽  
Y. Kanazawa ◽  
H. Mikawa ◽  
S. Kusabayashi ◽  
M. Yokoyama
Keyword(s):  
Glass Transition ◽  
Charge Carrier ◽  
Carrier Transport ◽  
Transport Phenomena ◽  
Charge Carrier Transport
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