Reliability Evaluation of 4H-SiC JFETs Using I-V Characteristics and Low Frequency Noise

2013 ◽  
Vol 740-742 ◽  
pp. 934-937
Author(s):  
Hua Khee Chan ◽  
Rupert C. Stevens ◽  
Jonathan P. Goss ◽  
Nicholas G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Spectral Density ◽  
Power Spectral Density ◽  
Low Frequency ◽  
Frequency Noise ◽  
Noise Power ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Noise Power Spectral Density ◽  
Power Spectral ◽  
Noise Measurements

Two sets of 4H-SiC signal-lateral JFETs were thermally aged at 400°C and 500°C in furnaces open to air for 1000 hours. I"-" V and low frequency noise measurements were performed on these devices and the results were compared against the as-fabricated sample. The data from I"-" V characterisation demonstrates that the linear and saturated drain-source current decreases monotonically with stress temperature. In addition, the linear characteristics of the JFETs have shifted approximately 1.5V along the drain-source voltage axis. Whilst the devices thermally aged at 400°C show no degradation in magnitude and behaviour in Noise Power Spectral Density (NPSD), the NPSD of 500°C stressed devices has increase approximately 30dB and it shows a full frequency spectrum of 1/ƒ dependency up to 100 kHz. A further investigation of the noise origin reveals that the Normalised Noise Power Spectral Density (NNPSD) of the aged sample is directly proportional to RDSwhich is similar to the as-fabricated sample. Thus we hypothesize that the existing noise sources have intensified possibly due to the evolution of defects.

Low-Frequency Noise Characterization in AlGaN/GaN HEMTs with Varying Gate Recess Depths

2004 ◽  
Vol 831 ◽  
Author(s):  
Shrawan. K. Jha ◽  
Bun. H. Leung ◽  
Charles C. Surya ◽  
Heins Schweizer ◽  
Manfred. H. Pilkhuhn
Keyword(s):  
Low Frequency ◽  
Dry Etching ◽  
Frequency Noise ◽  
Noise Power ◽  
Hot Electron ◽  
Low Frequency Noise ◽  
Noise Power Spectral Density ◽  
Noise Measurements ◽  
Gan Hemts ◽  
Gate Recess

ABSTRACTLow-frequency noise measurements were performed on a number of AlGaN/GaN HEMTs with different gate recess depths, which were formed by dry etching. Detailed characterizations of the low-frequency noise properties were performed on the devices as a function of as a function of hot-electron stressing conducted at VD = 10 V and VG = -1.5 V. The room temperature voltage noise power spectral density, SV(ƒ), of the devices were found to show 1/ƒ dependence. A comparison of SV(ƒ) measured from different devices clearly indicate increase in the noise levels for the devices with large recess depths, reflecting the degradation caused by ion-impact induced damage during recess formation. Furthermore, the results of low-frequency noise measurements showed fast degradations for the devices with larger gate recess depths. Our experimental data clearly show that the dry etching process has induced damages in gates.

Adaptive algorithms for measuring low-frequency noise parameters of semiconductor devices under mass control

2020 ◽  
pp. 59-64
Author(s):  
V. А. Sergeev ◽  
S. Е. Reschikoff
Keyword(s):  
Spectral Density ◽  
Power Spectral Density ◽  
Semiconductor Devices ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Filter Bandwidth ◽  
Spectrum Shape ◽  
Power Spectral ◽  
Shape Indicator

The solution of the problem of increasing the confidence and efficiency of quality control of semiconductor devices is considered. The analysis of conditions for measuring the power spectral density of low – frequency noise of semiconductor devices with a spectrum of the form (γ – the spectrum shape indicator) under mass quality control is presented. The error in measuring the power spectral density under the specified measurement conditions strongly depends on the value of the spectrum shape indicator. Adaptive algorithms for measuring low-frequency noise parameters are proposed for cases of a given limit error in measuring the power spectral density and a given time for a single measurement. The proposed algorithms include a preliminary estimation of the value of the spectrum shape indicator and subsequent measurement of the noise power spectral density at the optimal filter bandwidth. The optimal filter bandwidth is determined based on the results of a preliminary assessment of the spectrum shape indicator. For both cases, we obtained estimates of the gain in the sense of the average for the set (ensemble) of controlled products. The possibility of adaptive or cognitive adjustment of the measurement system parameters in the control process based on the results of evaluating sample averages in the training sample is discussed.

scholarly journals Measurements of Low Frequency Noise of Infrared Photo-Detectors with Transimpedance Detection System

2014 ◽  
Vol 21 (3) ◽  
pp. 461-472 ◽  
Author(s):  
Łukasz Ciura ◽  
Andrzej Kolek ◽  
Waldemar Gawron ◽  
Andrzej Kowalewski ◽  
Dariusz Stanaszek
Keyword(s):  
Dark Current ◽  
Detection System ◽  
Power Spectra ◽  
Low Frequency ◽  
Frequency Noise ◽  
Noise Power ◽  
Low Frequency Noise ◽  
Leakage Resistance ◽  
Noise Measurements ◽  
Hgcdte Detector

Abstract The paper presents the method and results of low-frequency noise measurements of modern mid-wavelength infrared photodetectors. A type-II InAs/GaSb superlattice based detector with nBn barrier architecture is compared with a high operating temperature (HOT) heterojunction HgCdTe detector. All experiments were made in the range 1 Hz - 10 kHz at various temperatures by using a transimpedance detection system, which is examined in detail. The power spectral density of the nBn’s dark current noise includes Lorentzians with different time constants while the HgCdTe photodiode has more uniform 1/f - shaped spectra. For small bias, the low-frequency noise power spectra of both devices were found to scale linearly with bias voltage squared and were connected with the fluctuations of the leakage resistance. Leakage resistance noise defines the lower noise limit of a photodetector. Other dark current components give raise to the increase of low-frequency noise above this limit. For the same voltage biasing devices, the absolute noise power densities at 1 Hz in nBn are 1 to 2 orders of magnitude lower than in a MCT HgCdTe detector. In spite of this, low-frequency performance of the HgCdTe detector at ~ 230K is still better than that of InAs/GaSb superlattice nBn detector.

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