Identification of Structures of the Deep Levels in 4H-SiC
2014 ◽
Vol 778-780
◽
pp. 277-280
Keyword(s):
We investigated annealing behavior of the carrier lifetime and the deep levels in electron irradiated n-type and semi-insulating 4H-SiCs. We observed two peaks for each sample by photo induced current transient spectroscopy (PICTS) measurements, and their heights depended on annealing temperature. By comparing the annealing behavior of the peak height with reported temperature dependence of concentrations of various defects, we speculated that the observed peaks originate from either VSiVC, CSiVC or EI4.
1986 ◽
Vol 19
(1)
◽
pp. 57-70
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Keyword(s):
1998 ◽
Vol 169
(1)
◽
pp. 85-96
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1986 ◽
Vol 19
(1)
◽
pp. 71-87
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1997 ◽
Vol 201
(1)
◽
pp. 135-141
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2014 ◽
Vol 44
(1)
◽
pp. 222-226
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1991 ◽
Vol 6
(9)
◽
pp. 937-939
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1983 ◽
Vol 22
(Part 1, No. 4)
◽
pp. 621-628
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Keyword(s):