Investigation of Pressure Dependent Thermal Contact Resistance between Silver Metallized SiC Chip and DBC Substrate

2015 ◽  
Vol 821-823 ◽  
pp. 452-455 ◽  
Author(s):  
Zsolt Toth Pal ◽  
Ya Fan Zhang ◽  
Ilja Belov ◽  
Hans Peter Nee ◽  
Mietek Bakowski
Keyword(s):  
Heat Transfer ◽  
Contact Resistance ◽  
Thermal Contact Resistance ◽  
Cfd Simulation ◽  
Thermal Contact ◽  
Cfd Model ◽  
Transfer Experiment ◽  
Transfer Path ◽  
Computational Fluid Dynamics Cfd ◽  
Pressure Independent

– Thermal contact resistances between a silver metallized SiC chip and a direct bonded copper (DBC) substrate have been measured in a heat transfer experiment. A novel experimental method to separate thermal contact resistances in multilayer heat transfer path has been demonstrated. The experimental results have been compared with analytical calculations and also with 3D computational fluid dynamics (CFD) simulation results. A simplified CFD model of the experimental setup has been validated. The results show significant pressure dependence of the thermal contact resistance but also a pressure independent part.

Investigation of Pressure Dependent Thermal Contact Resistance between Silver Metallized SiC Chip and Molybdenum Substrate and between Molybdenum Substrate and Bulk Copper

2016 ◽  
Vol 858 ◽  
pp. 1061-1065
Author(s):  
Zsolt Toth-Pal ◽  
Ya Fan Zhang ◽  
Hans Peter Nee ◽  
Mietek Bakowski
Keyword(s):  
Heat Transfer ◽  
Contact Resistance ◽  
Thermal Contact Resistance ◽  
Cfd Simulation ◽  
Thermal Contact ◽  
Transfer Experiment ◽  
Transfer Path ◽  
Molybdenum Substrate ◽  
Specific Contact ◽  
Computational Fluid Dynamics Cfd

– Thermal contact resistances between a silver metallized SiC chip and a Molybdenum substrate and between the Molybdenum substrate and bulk Copper were measured in a heat transfer experiment. An experimental method to separate thermal contact resistances in a multilayer heat transfer path was used to extract the layer-specific contact resistances. The experimental results were compared with analytical calculations and also with 3-D computational fluid dynamics (CFD) simulation results. The results show significant pressure dependence of the thermal contact resistance and the results show higher thermal contact resistance per unit area between the bulk SiC chip and Molybdenum than between Molybdenum and bulk Copper.

scholarly journals Study of an inclined interface of contact using lattice Boltzmann method

2019 ◽  
Vol 23 (3 Part B) ◽  
pp. 1837-1846
Author(s):  
Mhamdi El ◽  
Elalami Semma
Keyword(s):  
Heat Transfer ◽  
Contact Resistance ◽  
Lattice Boltzmann Method ◽  
Lattice Boltzmann ◽  
Thermal Contact Resistance ◽  
Transfer Problem ◽  
Thermal Contact ◽  
Image Model ◽  
Steady Regime ◽  
Boltzmann Method

The lattice Boltzmann method and the particle image model are adopted to study a heat transfer problem with thermal contact resistance. In this paper, a new study involving an inclined interface of contact between two media is introduced in order to evaluate a 2-D heat transfer in the steady regime. A case of study and numerical results are provided to support this configuration. The obtained results show the effect of the thermal contact resistance on the heat transfer, as well as the temperature distribution on the two contacting media.

The problem of thermal contact resistance during heat transfer to liquid metals

Atomic Energy ◽  
1962 ◽  
Vol 11 (3) ◽  
pp. 910-913
Author(s):  
O. P. Astakhov ◽  
V. I. Petrov ◽  
O. S. Fedynskii
Keyword(s):  
Heat Transfer ◽  
Contact Resistance ◽  
Thermal Contact Resistance ◽  
Liquid Metals ◽  
Thermal Contact

Measuring the Thermal Contact Resistance Between Cu Foams and Substrates for On-Chip Cooling Applications in Data Centers

2021 ◽  
Author(s):  
Lucas Arrivo ◽  
Steven Schon ◽  
Aaron P. Wemhoff
Keyword(s):  
Heat Transfer ◽  
Contact Resistance ◽  
Data Centers ◽  
Thermal Contact Resistance ◽  
Thermal Contact ◽  
Metal Foams ◽  
Heat Transfer Area ◽  
Chip Cooling ◽  
Cold Plates ◽  
On Chip

Abstract Data centers housing high performance computing equipment have large and growing rack densities, which pushes the limits of traditional air cooling technologies because of limited heat transfer coefficients. Therefore, on-chip cooling using so-called cold plates is emerging as a necessary cooling option for high-density electronics. The use of mini-channels or pins fins to enhance internal heat transfer area inside cold plates requires extensive micro-machining that is relatively time consuming and expensive for mass production. As an alternative approach, inserting and bonding pre-manufactured metal foams into hollow bodies are explored as a potentially inexpensive means to enhance the interior heat transfer area of cold plates. One key aspect of the performance of metal foams in cold plates is the thermal contact resistance in the bonding between the foam and the substrate. This project predicts the contact resistance using measurements of different foam types (pure Cu and Cu with oxide), porosities (63%, 80%, 93%, and 95%) and thicknesses (4 mm, 8 mm, and 10 mm). These measurements are carried out with and without the use of thermal interface material (TIM) pads. A theory is proposed and implemented to estimate the contact and foam thermal resistances, but further work is needed to gain confidence in the results. Observations suggest that different thermal behavior is seen for the Cu foams compared to the Cu with oxide foams, and that the use of TIM pads can achieve 10x to 40x reduction in overall thermal resistance for highly porous foams bonded on Cu substrates.

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