Defect Impurity Complex Formation at High Donor Concentration in Silicon

AbstractDirect analytical calculations of the static dielectric permittivity-dependent electron mobility due to different elastic scattering mechanisms for n-type InSb were carried out. The calculated static dielectric permittivity increases by increasing of donor concentration. The temperature dependence of the electron mobility from 10 K up to 300 K has been demonstrated. Generally, the electron mobility shows peak behavior in this range of temperatures. The direct correlation between the electron mobility and the static dielectric permittivity at 300 K was investigated. The dependence of the electron mobility on donor concentration was discussed both when the static dielectric permittivity is assumed to be varying and when it is assumed to be a constant. The difference in behavior was noticed particularly at high donor concentrations.

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Ultrafast Electron Transfer in Optically Prepared "Simple" Ion Pairs: The Mechanism at High Donor Concentration

The Journal of Physical Chemistry ◽

10.1021/j100007a036 ◽

1995 ◽

Vol 99 (7) ◽

pp. 2016-2023 ◽

Cited By ~ 18

Author(s):

Wlodzimierz Jarzeba ◽

Khalid Thakur ◽

Aldo Hoermann ◽

Paul F. Barbara

Keyword(s):

Electron Transfer ◽

Ion Pairs ◽

Donor Concentration ◽

High Donor ◽

Ultrafast Electron Transfer

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Direct Measurements of the Charge-Recombination Dynamics of Geminate Ion Pairs Formed upon Electron-Transfer Quenching at High Donor Concentration

The Journal of Physical Chemistry A ◽

10.1021/jp0023260 ◽

2001 ◽

Vol 105 (2) ◽

pp. 340-348 ◽

Cited By ~ 50

Author(s):

Eric Vauthey

Keyword(s):

Electron Transfer ◽

Ion Pairs ◽

Charge Recombination ◽

Donor Concentration ◽

Direct Measurements ◽

High Donor ◽

Recombination Dynamics

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Top-Down Fabrication Process of ZnO NWFETs

Journal of Nano Research ◽

10.4028/www.scientific.net/jnanor.57.77 ◽

2019 ◽

Vol 57 ◽

pp. 77-92 ◽

Cited By ~ 1

Author(s):

Nonofo M.J. Ditshego ◽

Suhana Mohamed Sultan

Keyword(s):

Thin Film ◽

Field Effect ◽

Interface State ◽

Electrical Characteristics ◽

Donor Concentration ◽

Subthreshold Slope ◽

Field Effect Mobility ◽

Top Down ◽

A Value ◽

High Donor

ZnO NWFETs were fabricated with and without Al2O3passivation. This was done by developing a new recipe for depositing the thin film of ZnO. By using a high donor concentration of 1.7 x 1018cm-3for the thin film, contact resistance values were lowered (passivated device had Rcon= 2.5 x 104Ω; unpassivated device had Rcon= 3.0 x 105Ω). By depositing Zn first instead of O2, steep subthreshold slopes were obtained. The passivated device had a subthreshold slope of 225 mV/decade and the unpassivated device had a slope of 125 mV/decade. Well-behaved electrical characteristics have been obtained and the passivated device shows field effect mobility of 10.9 cm2/Vs and the un-passivated device shows a value of 31.4 cm2/Vs. To verify the results, 3D simulation was also carried out which shows that the obtained values of sub-threshold slope translate into interface state number densities of-1.86 x 1013cm-2for the unpassivated device and 3.35 x 1014cm-2for the passivated device. The passivated device is suitable for biosensing applications.

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Grain growth in donor-doped SrTiO3

Journal of Materials Research ◽

10.1557/jmr.1990.1237 ◽

1990 ◽

Vol 5 (6) ◽

pp. 1237-1245 ◽

Cited By ~ 31

Author(s):

C-J. Peng ◽

Y-M. Chiang

Keyword(s):

Electron Microscopy ◽

Solid Solution ◽

Transmission Electron Microscopy ◽

Grain Growth ◽

Scanning Transmission Electron Microscopy ◽

Donor Concentration ◽

Silicate Phase ◽

Transmission Electron ◽

Scanning Transmission ◽

High Donor

The Nb donor concentration and cation stoichiometry dependence of grain growth in SrTiO3 has been studied. The so-called donor anomaly, where grain growth is enhanced at low donor but suppressed at high donor concentrations, is observed only in nonstoichiometric compositions with an excess of B-site cations. Scanning transmission electron microscopy (STEM) observations indicate that this phenomenon is entirely a result of changes in the distribution of residual silicate phases. Exaggerated grain growth at low donor concentrations results from the presence of a continuously wetting grain boundary silicate, whereas inhibited growth at higher donor concentrations occurs in microstructures where the silicate phase is nonwetting. In stoichiometric compositions, however, grain growth rates are both slower and independent of donor concentration. In this composition regime grain growth appears to be limited by solid solution drag. The presence of residual silicates only in nonstoichiometric compositions implies a strong stoichiometry dependence of the silica solubility.

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