The Effect of Nitrogen on the 4H-SiC/SiO2 Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping
2018 ◽
Vol 924
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pp. 469-472
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Keyword(s):
In this work, we study the effects of NO anneals on the interface of 4H-SiC MOSFETs via spin dependent charge pumping, an electrically detected magnetic resonance technique. We make measurements at high and ultra-low resonance frequencies. Our results indicate that the NO anneals both change the silicon vacancy energy levels as well as induces disorder at the interface. In addition, our results indicate that the changes in energy levels involve N atoms very close to VSi sites.
2018 ◽
Vol 9
(1)
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pp. 13-20
1993 ◽
Vol 2
(1)
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pp. 120-128
1974 ◽
Vol 96
(24)
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pp. 7589-7591
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1976 ◽
Vol 276
(1)
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pp. 9-14
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