Conductivity Study of Co3O2BO3 and Co3-xFexO2BO3 Oxyborates

Single crystals of cobalt oxyborates Co3O2BO3 and Co3-xFexO2BO3 were synthesized. The crystal structure and electric properties were investigated. The difference in the electrical resistivity behaviors was found. For parent Co3O2BO3 nor simple activation law, nor Mott variable range hopping (VRH) are acquirable to describe the experimental data in wide temperature region. In contrast for Co3-xFex O2BO3 Mott’s variable-range hopping conductivity clearly dominates.

Download Full-text

Variable-range hopping conductivity in Cu2ZnGeSe4 single crystals

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2014.04.004 ◽

2014 ◽

Vol 127 ◽

pp. 87-91 ◽

Cited By ~ 9

Author(s):

M. Guc ◽

K.G. Lisunov ◽

E. Hajdeu ◽

S. Levcenko ◽

V. Ursaki ◽

...

Keyword(s):

Single Crystals ◽

Variable Range Hopping ◽

Hopping Conductivity ◽

Variable Range

Download Full-text

Variable range hopping conductivity at low temperatures in CuGaS2 single crystals

physica status solidi (c) ◽

10.1002/pssc.201400339 ◽

2015 ◽

Vol 12 (6) ◽

pp. 789-792

Author(s):

N. A. Abdullayev ◽

Kh. V. Aliquliyeva ◽

I. Qasimoglu ◽

T. G. Kerimova ◽

I. A. Mamedova

Keyword(s):

Single Crystals ◽

Low Temperatures ◽

Variable Range Hopping ◽

Hopping Conductivity ◽

Variable Range

Download Full-text

Transverse resistance in HoBa2Cu3O7−δ single crystals

Modern Physics Letters B ◽

10.1142/s0217984915502322 ◽

2015 ◽

Vol 29 (35n36) ◽

pp. 1550232

Author(s):

Ruslan V. Vovk ◽

Georgij Ya. Khadzhai ◽

Oleksandr V. Dobrovolskiy ◽

Zarif F. Nazyrov ◽

Alexander Chroneos

Keyword(s):

Single Crystals ◽

Electrical Resistance ◽

Residual Resistivity ◽

Variable Range Hopping ◽

Fluctuation Conductivity ◽

Hopping Conductivity ◽

Variable Range ◽

Temperature Range ◽

Transverse Resistance ◽

Semiconductor Character

The transverse electrical resistance of HoBa2Cu3O[Formula: see text] single crystals is investigated in the temperature range [Formula: see text] for optimally-doped [Formula: see text] and oxygen-poor [Formula: see text] samples. With decreasing temperature, the resistivity of the optimally-doped samples has been found to transit from the regime of scattering on phonons and defects to the regime of “semiconductor” character and, near [Formula: see text], of the fluctuation conductivity. The oxygen-poor samples have been revealed to exhibit only a variable range hopping conductivity of “semiconductor” character, which near [Formula: see text] transits into the fluctuation conductivity. A significant anisotropy of the residual resistivity and characteristics of the fluctuation conductivity is observed for samples of both types.

Download Full-text