Transverse resistance in HoBa2Cu3O7−δ single crystals

2015 ◽  
Vol 29 (35n36) ◽  
pp. 1550232
Author(s):  
Ruslan V. Vovk ◽  
Georgij Ya. Khadzhai ◽  
Oleksandr V. Dobrovolskiy ◽  
Zarif F. Nazyrov ◽  
Alexander Chroneos

The transverse electrical resistance of HoBa2Cu3O[Formula: see text] single crystals is investigated in the temperature range [Formula: see text] for optimally-doped [Formula: see text] and oxygen-poor [Formula: see text] samples. With decreasing temperature, the resistivity of the optimally-doped samples has been found to transit from the regime of scattering on phonons and defects to the regime of “semiconductor” character and, near [Formula: see text], of the fluctuation conductivity. The oxygen-poor samples have been revealed to exhibit only a variable range hopping conductivity of “semiconductor” character, which near [Formula: see text] transits into the fluctuation conductivity. A significant anisotropy of the residual resistivity and characteristics of the fluctuation conductivity is observed for samples of both types.

2014 ◽  
Vol 127 ◽  
pp. 87-91 ◽  
Author(s):  
M. Guc ◽  
K.G. Lisunov ◽  
E. Hajdeu ◽  
S. Levcenko ◽  
V. Ursaki ◽  
...  

2010 ◽  
Vol 3 (2) ◽  
pp. 95-98
Author(s):  
Evgeny N. Tkachev ◽  
Anatoliy I. Romanenko ◽  
Olga B. Anikeeva ◽  
Timofey I. Buryakov ◽  
Kamil R. Zhdanov ◽  
...  

In this paper electro physical properties of samples of onion-like carbon have been investigated. Samples have been synthesized by method of thermal graphitization of nanodiamonds. 1D Mott variable-range hopping conductivity has been observed for temperature dependences of resistance of nanoonions volume samples at temperature range 4.2 K – 300 K. Also second-degree increase of positive magnetoresistance up to 6 tesla has been revealed. Some coefficients such as localization radius a, density of states on Fermi level N(EF) have been estimated.


2015 ◽  
Vol 12 (6) ◽  
pp. 789-792
Author(s):  
N. A. Abdullayev ◽  
Kh. V. Aliquliyeva ◽  
I. Qasimoglu ◽  
T. G. Kerimova ◽  
I. A. Mamedova

2019 ◽  
Vol 33 (20) ◽  
pp. 1950233
Author(s):  
G. Ya. Khadzhai ◽  
R. V. Vovk ◽  
Yu. V. Litvinov ◽  
V. V. Sklyar ◽  
O. V. Dobrovolskiy

Temperature dependences of the electrical resistance along the c-axis of [Formula: see text] single crystals are investigated before and after irradiation with electrons at 0.5–2.5 MeV energies. The irradiation was done at [Formula: see text] K and the irradiation dose was varied from [Formula: see text] to [Formula: see text]. An enhancement of the charge carriers localization with increase of the irradiation dose has been revealed. A crossover from the pseudogap (PG) regime to the variable-range hopping conductivity has been observed.


2009 ◽  
Vol 152-153 ◽  
pp. 104-107 ◽  
Author(s):  
N.V. Kazak ◽  
N.B. Ivanova ◽  
V.V. Rudenko ◽  
S.G. Ovchinnikov ◽  
A.D. Vasil’ev ◽  
...  

Single crystals of cobalt oxyborates Co3O2BO3 and Co3-xFexO2BO3 were synthesized. The crystal structure and electric properties were investigated. The difference in the electrical resistivity behaviors was found. For parent Co3O2BO3 nor simple activation law, nor Mott variable range hopping (VRH) are acquirable to describe the experimental data in wide temperature region. In contrast for Co3-xFex O2BO3 Mott’s variable-range hopping conductivity clearly dominates.


2003 ◽  
Vol 94 (9) ◽  
pp. 5912-5917 ◽  
Author(s):  
K. G. Lisunov ◽  
B. Raquet ◽  
H. Rakoto ◽  
J. M. Broto ◽  
E. Arushanov ◽  
...  

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