Characterisation of Dislocation-Content in Multicrystalline-Silicon Wafers
Keyword(s):
Etch Pit
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A major performance limiting factor of multicrystalline silicon wafers is structural defects, mainly dislocations, reducing solar cell efficiency. Dislocations are formed during crystallisation process. Characterization of dislocation-content is necessary both to optimise the crystallisation and to eliminate bad wafers before cell processing. We developed two techniques to characterise dislocations: conventional etch-pit counting modified for full size wafers using a new etch-recipe and a novel etch-pit counting algorithm. Secondly we developed a technique to estimate the dislocation content directly from photoluminescence images of as-cut wafers.
2019 ◽
Vol 64
(9)
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pp. 923-927
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2012 ◽
Vol 105
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pp. 159-166
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Vol 19
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pp. 4-8
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pp. 122-129
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Vol 504
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pp. 51-55
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Vol 120
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pp. 289-294
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Vol 5
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pp. 499-506
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