Characterisation of Dislocation-Content in Multicrystalline-Silicon Wafers

2013 ◽  
Vol 205-206 ◽  
pp. 65-70
Author(s):  
Ali Ghaderi ◽  
Semih Senkader

A major performance limiting factor of multicrystalline silicon wafers is structural defects, mainly dislocations, reducing solar cell efficiency. Dislocations are formed during crystallisation process. Characterization of dislocation-content is necessary both to optimise the crystallisation and to eliminate bad wafers before cell processing. We developed two techniques to characterise dislocations: conventional etch-pit counting modified for full size wafers using a new etch-recipe and a novel etch-pit counting algorithm. Secondly we developed a technique to estimate the dislocation content directly from photoluminescence images of as-cut wafers.

2019 ◽  
Vol 64 (9) ◽  
pp. 923-927
Author(s):  
Liang He ◽  
Sheng Cao ◽  
Hai Liu ◽  
Hua Liu ◽  
Hongzhi Luo ◽  
...  

2014 ◽  
Vol 4 (1) ◽  
pp. 122-129 ◽  
Author(s):  
Florian Schindler ◽  
Bernhard Michl ◽  
Jonas Schon ◽  
Wolfram Kwapil ◽  
Wilhelm Warta ◽  
...  

2014 ◽  
Vol 120 ◽  
pp. 289-294 ◽  
Author(s):  
Longfei Gong ◽  
Fengzhen Wang ◽  
Qing Cai ◽  
Da You ◽  
Bing Dai

Author(s):  
J. Narayan

Although extensive electron microscope studies of defect structures in silicon single crystals have been made, it appears that little or no attention has been given to the defect structures in polycrystalline silicon (Polysil) because it has been used almost exclusively as a source material subjected to further purification and growth into device grade single crystals. There is current interest in Polysil for fabrication of less expensive solar cells; however, improvement in the electrical properties will be necessary in order to achieve reasonable solar cell efficiency. Since most structural defects degrade the electrical properties of both p- and n-type silicon, the characterization of their structures will provide a basis for selection of better material and/or processes for reducing defect densities. The present work is part of a program which includes the evaluation and development of Polysil as a solar cell material. The observations reported here were made on Polysil obtained from Texas Instruments and Monsanto and are believed to be more or less representative of the structures observed in other Polysil material.


2015 ◽  
Vol 5 (2) ◽  
pp. 499-506 ◽  
Author(s):  
Florian Schindler ◽  
Bernhard Michl ◽  
Andreas Kleiber ◽  
Heiko Steinkemper ◽  
Jonas Schon ◽  
...  

2020 ◽  
pp. 114-119

Experimental and theoretical study Porphyrin-grafted ZnO nanowire arrays were investigated for organic/inorganic hybrid solar cell applications. Two types of porphyrin – Tetra (4-carboxyphenyle) TCPP and meso-Tetraphenylporphine (Zinc-TPP)were used to modify the nanowire surfaces. The vertically aligned nanowires with porphyrin modifications were embedded in graphene-enriched poly (3-hexylthiophene) [G-P3HT] for p-n junction nanowire solar cells. Surface grafting of ZnO nanowires was found to improve the solar cell efficiency. There are different effect for the two types of porphyrin as results of Zn existing. Annealing effects on the solar cell performance were investigated by heating the devices up to 225 °C in air. It was found that the cell performance was significantly degraded after annealing. The degradation was attributed to the polymer structural change at high temperature as evidenced by electrochemical impedance spectroscopy measurements.


Author(s):  
Martin A. Green ◽  
Ewan D. Dunlop ◽  
Jochen Hohl‐Ebinger ◽  
Masahiro Yoshita ◽  
Nikos Kopidakis ◽  
...  

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