silicon material
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2021 ◽  
Vol 2103 (1) ◽  
pp. 012068
Author(s):  
D Mitina ◽  
E Verbitskaya ◽  
I Eremin ◽  
N Fadeeva

Abstract The presented paper is focused around radiation damage of silicon material under the different ions irradiation. The ion total energy range is 0.7 GeV for 7Li to 208 GeV for 208Pb. The results of TRIM modeling for the set of six ions are presented. The extracted information about vacancy production allows making first assumptions of the Si degradation dependence on mass and energy of the incident ion.


Silicon ◽  
2021 ◽  
Author(s):  
Shashi Bala ◽  
Harpal Singh ◽  
Priyanka Kamboj ◽  
Balwant Raj

Author(s):  
ناريمان ياسين مرقا

The retention of the lower denture, was one of the most important factors for success the complete dentures (CD) for edentulous patients with resorbed mandibular ridge. Therefore, this study was conducted to compare the retention of the lower complete denture for patients with full resuscitation treated by traditional complete denture and denture manufactured by silicon materials. The studied sample consisted of (12) patients (5 males and 7 females) between the ages of (55-71) years, with an average age of (63) years. Two lower dentures were made in two different ways: the conventional method and the silicon material method opposite to one upper whole denture. The retention of the lower denture was measured on the digital forces meter when the dentures was delivered to the patient. Three readings were recorded for each technique. The results showed a difference in the retention of the lower denture. The retention value by Newton (N) In set of lower manufactured using silicon materials of the lower denture were (7.03) higher in the set of lower denture manufactured in the traditional way.


Silicon ◽  
2021 ◽  
Author(s):  
Umakanth V. ◽  
Ajit Singh ◽  
Sanjai Kumar ◽  
Neeraj Tyagi ◽  
V. K. Kaul ◽  
...  

2020 ◽  
Vol 30 (2) ◽  
pp. 31-40
Author(s):  
Ghazwan Ali ◽  
Marwan Hafeedh Younus ◽  
Ivan Karomi

2020 ◽  
Vol 71 (5) ◽  
pp. 353-358
Author(s):  
Stanislava Serečunová ◽  
Dana Seyringer ◽  
Heinz Seyringer ◽  
František Uherek

Abstract This paper presents the design and optimization of 1 × 2 N Y-branch optical splitters for telecom applications. A waveguide channel profile, used in the splitter design, is based on a standard silica-on-silicon material platform except for the lengths of the used Y-branches, design parameters such as port pitch between the waveguides and simulation parameters for all splitters were considered fixed. For every Y-branch splitter, insertion loss, non-uniformity, and background crosstalk are calculated. According to the minimum insertion loss and minimum non-uniformity, the optimum length for each Y-branch is determined. Finally, the individual Y-branches are cascade joined to design various Y-branch optical splitters, from 1 × 2 to 1 × 64.


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