Role of Ag+ Ion Concentration on Metal-Assisted Chemical Etching of Silicon

2014 ◽  
Vol 213 ◽  
pp. 103-108 ◽  
Author(s):  
Olga V. Pyatilova ◽  
Sergey A. Gavrilov ◽  
Alexey A. Dronov ◽  
Yana S. Grishina ◽  
Alexey N. Belov
Keyword(s):  
Chemical Etching ◽  
Catalyst Concentration ◽  
Silver Ions ◽  
Geometric Parameters ◽  
Ion Concentration ◽  
Silicon Etching ◽  
Silver Catalyst ◽  
Nanostructured Silicon ◽  
Metal Assisted Chemical Etching

Abstract. Metal-assisted silicon etching in the HF/H2O2/H2O solution with silver ions as a catalyst was investigated. It is found that geometric parameters of layers of nanostructured silicon are determined by the silver-catalyst concentration. A spontaneous stop of the etching process at low Ag+ ion concentration is explained by formation of insoluble Ag2SiO3.

scholarly journals Effects of silver catalyst concentration in metal assisted chemical etching of silicon

2018 ◽  
Vol 221 ◽  
pp. 206-210 ◽  
Author(s):  
Ragavendran Venkatesan ◽  
Muthu Kumar Arivalagan ◽  
Vishnukanthan Venkatachalapathy ◽  
Joshua M. Pearce ◽  
Jeyanthinath Mayandi
Keyword(s):  
Chemical Etching ◽  
Catalyst Concentration ◽  
Silver Catalyst ◽  
Metal Assisted Chemical Etching

Role of catalyst concentration on metal assisted chemical etching of silicon

2013 ◽  
Vol 109 ◽  
pp. 333-339 ◽  
Author(s):  
J. Cichoszewski ◽  
M. Reuter ◽  
F. Schwerdt ◽  
J.H. Werner
Keyword(s):  
Chemical Etching ◽  
Catalyst Concentration ◽  
Metal Assisted Chemical Etching

scholarly journals Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3179
Author(s):  
Qi Wang ◽  
Kehong Zhou ◽  
Shuai Zhao ◽  
Wen Yang ◽  
Hongsheng Zhang ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Low Cost ◽  
Etching Rate ◽  
Surface Damage ◽  
Device Fabrication ◽  
Irreversible Damage ◽  
Catalytic Role ◽  
Metal Assisted Chemical Etching ◽  
Gan Etching

Realizing the anisotropic deep trenching of GaN without surface damage is essential for the fabrication of GaN-based devices. However, traditional dry etching technologies introduce irreversible damage to GaN and degrade the performance of the device. In this paper, we demonstrate a damage-free, rapid metal-assisted chemical etching (MacEtch) method and perform an anisotropic, deep trenching of a GaN array. Regular GaN microarrays are fabricated based on the proposed method, in which CuSO4 and HF are adopted as etchants while ultraviolet light and Ni/Ag mask are applied to catalyze the etching process of GaN, reaching an etching rate of 100 nm/min. We comprehensively explore the etching mechanism by adopting three different patterns, comparing a Ni/Ag mask with a SiN mask, and adjusting the etchant proportion. Under the catalytic role of Ni/Ag, the GaN etching rate nearby the metal mask is much faster than that of other parts, which contributes to the formation of deep trenches. Furthermore, an optimized etchant is studied to restrain the disorder accumulation of excessive Cu particles and guarantee a continuous etching result. Notably, our work presents a novel low-cost MacEtch method to achieve GaN deep etching at room temperature, which may promote the evolution of GaN-based device fabrication.

scholarly journals Anisotropic Silicon Nanowire Arrays Fabricated by Colloidal Lithography

2021 ◽  
Author(s):  
Marcel Rey ◽  
Fedja Wendisch ◽  
Eric Goerlitzer ◽  
Josing Tang ◽  
Romina Bader ◽  
...  
Keyword(s):  
High Throughput ◽  
Chemical Etching ◽  
Large Scale ◽  
Silicon Nanowire ◽  
Geometric Parameters ◽  
Nanowire Arrays ◽  
Colloidal Lithography ◽  
Silicon Nanowire Arrays ◽  
Metal Assisted Chemical Etching

The combination of metal-assisted chemical etching (MACE) and colloidal lithography allows for the affordable, large-scale and high-throughput synthesis of silicon nanowire (SiNW) arrays. However, many geometric parameters of these arrays...

scholarly journals Nanotexturing of Silicon by Metal-Assisted Chemical Etching

2015 ◽  
Vol 16 (1) ◽  
pp. 140-144
Author(s):  
Ye. I. Berezhanskyi ◽  
S. I. Nichkalo ◽  
V. Yu. Yerokhov ◽  
A. A. Druzhynin
Keyword(s):  
Chemical Etching ◽  
Silicon Surface ◽  
High Efficiency ◽  
Surface Texturing ◽  
Geometric Parameters ◽  
Silicon Surfaces ◽  
Photovoltaic Converter ◽  
Efficient Approach ◽  
Metal Assisted Chemical Etching

This paper describes the method of metal assisted chemical etching (MacEtch) as an efficient approach for structuring the silicon surface with the ability to manage effectively the geometric parameters of the structures and their distribution on the surface of substrate. The surface texturing technology was presented and the structured silicon surfaces with regular and irregular types of surfaces have been obtained. This technology can be used for nanotexturing of the surface of silicon photovoltaic converters. The model of photovoltaic converter based on the crater-textured silicon surface with high efficiency was presented.

Raman spectroscopy of nanostructured silicon fabricated by metal-assisted chemical etching

2014 ◽  
Author(s):  
Igor Iatsunskyi ◽  
Stefan Jurga ◽  
Valentyn Smyntyna ◽  
Mykolai Pavlenko ◽  
Valeriy Myndrul ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Etching ◽  
Nanostructured Silicon ◽  
Metal Assisted Chemical Etching

scholarly journals Engineering Silicon to Porous Silicon and Silicon Nanowires by Metal-Assisted Chemical Etching: Role of Ag Size and Electron-Scavenging Rate on Morphology Control and Mechanism

ACS Omega ◽  
2017 ◽  
Vol 2 (8) ◽  
pp. 4540-4547 ◽  
Author(s):  
Kanakaraj Rajkumar ◽  
Ramanathaswamy Pandian ◽  
Amirthapandian Sankarakumar ◽  
Ramasamy Thangavelu Rajendra Kumar
Keyword(s):  
Porous Silicon ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Morphology Control ◽  
Metal Assisted Chemical Etching
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