scholarly journals Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3179
Author(s):  
Qi Wang ◽  
Kehong Zhou ◽  
Shuai Zhao ◽  
Wen Yang ◽  
Hongsheng Zhang ◽  
...  

Realizing the anisotropic deep trenching of GaN without surface damage is essential for the fabrication of GaN-based devices. However, traditional dry etching technologies introduce irreversible damage to GaN and degrade the performance of the device. In this paper, we demonstrate a damage-free, rapid metal-assisted chemical etching (MacEtch) method and perform an anisotropic, deep trenching of a GaN array. Regular GaN microarrays are fabricated based on the proposed method, in which CuSO4 and HF are adopted as etchants while ultraviolet light and Ni/Ag mask are applied to catalyze the etching process of GaN, reaching an etching rate of 100 nm/min. We comprehensively explore the etching mechanism by adopting three different patterns, comparing a Ni/Ag mask with a SiN mask, and adjusting the etchant proportion. Under the catalytic role of Ni/Ag, the GaN etching rate nearby the metal mask is much faster than that of other parts, which contributes to the formation of deep trenches. Furthermore, an optimized etchant is studied to restrain the disorder accumulation of excessive Cu particles and guarantee a continuous etching result. Notably, our work presents a novel low-cost MacEtch method to achieve GaN deep etching at room temperature, which may promote the evolution of GaN-based device fabrication.

2019 ◽  
Vol 21 (8) ◽  
pp. 1900490 ◽  
Author(s):  
Nguyen Van Toan ◽  
Xiaoyue Wang ◽  
Naoki Inomata ◽  
Masaya Toda ◽  
Ioana Voiculescu ◽  
...  

2012 ◽  
Vol 2012 (1) ◽  
pp. 000785-000792
Author(s):  
Zingway Pei ◽  
Jui-Po Sun ◽  
Hsin-Chen Lai ◽  
Pei-Jer Tzeng ◽  
Cha-Hsin Lin ◽  
...  

In this work, we utilize a photo-chemical etching (PCE) method to form through-glass-via (TGV). The PCE is a low cost, damage-free and potentially large-area method for TGV formation. An ultra-violet (355 nm) pulse laser was used to illuminate the glass surface. The illuminated region will crystallize after thermal annealing in a furnace. The crystallized glass shows much faster etching rate than the amorphous region in HF solution. For a relatively thick (600 nm) glass, a via-hole with diameter of around 60 μm was demonstrated in laser energy of 11 J/cm2. No laser damages were observed. In comparison, at least 10 times higher energy was required to drill a glass directly. Micro-cracks were form around the glass-via. In addition, a 40 selectivity was achieved to the crystallized and amorphous region. This simple and useful method paves a straight road for 3-D integration.


2001 ◽  
Vol 15 (28n29) ◽  
pp. 1419-1427
Author(s):  
KARUR R. PADMANABHAN

The possibility of carrying out in situ ion beam analysis of a gas-solid interface using RBS/Channeling techniques has been investigated using chemical and plasma etching of Si . A specially constructed thin Si window cell is used to initiate chemical etching of Si using Xe F 2. Analysis of etched Si surface using conventional, micro RBS/Channeling and computer simulated channeling spectra indicates a smooth damage free surface with fairly uniform etching. A moderate increase in etching rate and channeling χ min is observed in the presence of the analyzing beam. The results of chemical etching are compared with that due to Ar + and Xe + plasma induced etching of Si . In situ microbeam channeling analysis with CCM (Channeling Contrast Microscopy) of the plasma-etched surface indicates distinct differences in both etching rate and damage profile of Si (100) surface. The etching rate enhancement and damage profile have been explained using conventional TRIM analysis and ion beam surface damage.


2019 ◽  
Vol 9 (9) ◽  
pp. 1804
Author(s):  
Amal Kabalan

Silicon micropillars have been suggested as one of the techniques for improving the efficiency of devices. Fabrication of micropillars has been done in several ways—Metal Assisted Chemical Etching (MACE) and Reactive Ion Etching (RIE) being the most popular techniques. These techniques include etching through the surface which results in surface damage that affects the carrier lifetime. This paper presents a study that compares the carrier lifetime of micropillars fabricated using RIE and MACE methods. It also looks at increasing carrier lifetime by surface treatment using three main approaches: surface passivation by depositing Al2O3, surface passivation by depositing SiO2/SiN, and surface passivation by etching using KOH and Hydrofluoric Nitric Acetic (HNA) solution. It was concluded that passivating with SiO2 and SiN results in the highest carrier lifetime on the MACE and RIE pillars.


2014 ◽  
Vol 213 ◽  
pp. 103-108 ◽  
Author(s):  
Olga V. Pyatilova ◽  
Sergey A. Gavrilov ◽  
Alexey A. Dronov ◽  
Yana S. Grishina ◽  
Alexey N. Belov

Abstract. Metal-assisted silicon etching in the HF/H2O2/H2O solution with silver ions as a catalyst was investigated. It is found that geometric parameters of layers of nanostructured silicon are determined by the silver-catalyst concentration. A spontaneous stop of the etching process at low Ag+ ion concentration is explained by formation of insoluble Ag2SiO3.


2019 ◽  
Vol 7 (1) ◽  
Author(s):  
Fenfen Wang ◽  
Xianfeng Gao ◽  
Lulu Ma ◽  
Chris Yuan

As one of the most promising anode materials for high-capacity lithium ion batteries (LIBs), silicon nanowires (SiNWs) have been studied extensively. The metal-assisted chemical etching (MACE) is a low-cost and scalable method for SiNW synthesis. Nanoparticle emissions from the MACE process, however, are of grave concerns due to their hazardous effects on both occupational and public health. In this study, both airborne and aqueous nanoparticle emissions from the MACE process for SiNWs with three sizes of 90 nm, 120 nm, and 140 nm are experimentally investigated. The prepared SiNWs are used as anodes of LIB coin cells, and the experimental results reveal that the initial discharge and charge capacities of LIB electrodes are 3636 and 2721 mAh g−1 with 90 nm SiNWs, 3779 and 2712 mAh g−1 with 120 nm SiNWs, and 3611 and 2539 mAh g−1 with 140 nm SiNWs. It is found that for 1 kW h of LIB electrodes, the MACE process for 140 nm SiNWs produces a high concentration of airborne nanoparticle emissions of 2.48 × 109 particles/cm3; the process for 120 nm SiNWs produces a high mass concentration of aqueous particle emissions, with a value of 9.95 × 105 mg/L. The findings in this study can provide experimental data of nanoparticle emissions from the MACE process for SiNWs for LIB applications and can help the environmental impact assessment and life cycle assessment of the technology in the future.


2016 ◽  
Vol 4 (38) ◽  
pp. 8953-8961 ◽  
Author(s):  
Liyi Li ◽  
Bo Li ◽  
Chuchu Zhang ◽  
Chia-Chi Tuan ◽  
Zhiqun Lin ◽  
...  

A viable and low-cost strategy for fabricating high-aspect-ratio microstructures on silicon (Si) based on a judicious combination of flow-enabled self-assembly (FESA) and metal-assisted chemical etching (MaCE) is reported.


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