Collection Efficiency of Noble Metallic Contaminants on Si Wafers with HF-Aqua Regia Mixtures for VPD-DC ICPMS Analysis

of several new materials in clean rooms, the monitoring of trace metallic contamination is a real and present need. It is well known [1][2][3] that these impurities are detrimental to the efficiency of the microelectronics devices: they could cause crystal defects, act as electron traps, degrade minority carrier lifetime or increase the leakage current. Concerning the noble metallic contaminants (Au, Pt, Ir, Ru, Ag and Pd), now used in microelectronics to improve devices performances, their surface contamination control at low level (< 1010 at.cm-2) remains a great challenge.