Contamination control using HCl gas: effects on silica glass and minority carrier lifetime

1986 ◽  
Vol 26 (6) ◽  
pp. 1196
Keyword(s):  
Silica Glass ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Contamination Control ◽  
Hcl Gas

Collection Efficiency of Noble Metallic Contaminants on Si Wafers with HF-Aqua Regia Mixtures for VPD-DC ICPMS Analysis

2014 ◽  
Vol 219 ◽  
pp. 268-271 ◽  
Author(s):  
M. Devita ◽  
H. Fontaine ◽  
N. Drogue ◽  
D. Mathiot ◽  
V. Enyedi ◽  
...  
Keyword(s):  
Leakage Current ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Collection Efficiency ◽  
Minority Carrier Lifetime ◽  
Crystal Defects ◽  
New Materials ◽  
Aqua Regia ◽  
Contamination Control ◽  
Metallic Contaminants

of several new materials in clean rooms, the monitoring of trace metallic contamination is a real and present need. It is well known [1][2][3] that these impurities are detrimental to the efficiency of the microelectronics devices: they could cause crystal defects, act as electron traps, degrade minority carrier lifetime or increase the leakage current. Concerning the noble metallic contaminants (Au, Pt, Ir, Ru, Ag and Pd), now used in microelectronics to improve devices performances, their surface contamination control at low level (< 1010 at.cm-2) remains a great challenge.

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission

scholarly journals Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Marked Enhancement

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

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