Effect of Surface Oxidation on the Material Loss of InGaAs in Acidic Solutions

2021 ◽  
Vol 314 ◽  
pp. 89-94
Author(s):  
Jihoon Na ◽  
Sangwoo Lim

Indium gallium arsenide (InGaAs) is one of the candidate materials to overcome the physical limitation of Si due to its excellent electrical properties. The effect of surface oxidation on the etching characteristics of InGaAs surface in acidic solutions were investigated. InGaAs surfaces was etched in HCl/H2O2/H2O (CPM) and HNO3/H2O2/H2O (NPM), while there was no thickness change in diluted HCl or HNO3. The CPM-treated InGaAs surface had a lower etching rate than the NPM-treated one, while etching rate of oxidized layer was higher in diluted HCl than in HNO3. NaCl added in the NPM acts as an etching inhibitor for InGaAs and the etching rate was significantly suppressed. It is thought that Cl− anion inhibits the formation of hydroxyl radical (OH∙) or consumes OH∙ in acidic solution, inhibiting surface oxidation of InGaAs and suppressing its material loss.

2021 ◽  
Vol 314 ◽  
pp. 302-306
Author(s):  
Quoc Toan Le ◽  
E. Kesters ◽  
M. Doms ◽  
Efrain Altamirano Sánchez

Different types of ALD Ru films, including as-deposited, annealed Ru, without and with a subsequent CMP step, were used for wet etching study. With respect to the as-deposited Ru, the etching rate of the annealed Ru film in metal-free chemical mixtures (pH = 7-9) was found to decrease substantially. X-ray photoelectron spectroscopy characterization indicated that this behavior could be explained by the presence of the formation of RuOx (x = 2,3) caused by the anneal. A short CMP step applied to the annealed Ru wafer removed the surface RuOx, at least partially, resulting in a significant increase of the etching rate. The change in surface roughness was quantified using atomic force microscopy.


2011 ◽  
Vol 109 (8) ◽  
pp. 083515 ◽  
Author(s):  
A. Caron ◽  
P. Sharma ◽  
A. Shluger ◽  
H.-J. Fecht ◽  
D. V. Louzguine-Luzguin ◽  
...  

2018 ◽  
Vol 33 (4) ◽  
pp. 401-413 ◽  
Author(s):  
Vadym Kulish ◽  
Wenyuan Liu ◽  
Francis Benistant ◽  
Sergei Manzhos

Abstract


2018 ◽  
Vol 335 ◽  
pp. 140-150 ◽  
Author(s):  
Mathias Trojer ◽  
Reza Azizian ◽  
Jonathan Paras ◽  
Thomas McKrell ◽  
Kresna Atkhen ◽  
...  

2021 ◽  
pp. 2151018
Author(s):  
Cihan Kuru

In this study, aged Co–Mo (3:10) alloy film has been demonstrated as an efficient and durable catalyst for hydrogen evolution reaction (HER) in acidic solution. The Co–Mo alloy films with varying Co/Mo atomic ratios have been deposited by magnetron sputtering. The catalytic activity of Mo film is outperformed by the Co–Mo alloys, among which the Co–Mo (3:10) alloy exhibits the highest HER activity with an overpotential of 310 mV at 10 mA cm[Formula: see text] current density, exchange current density of 1.74 × 10[Formula: see text] A cm[Formula: see text] and a Tafel slope of 61 mV dec[Formula: see text]. Combined with the good stability provided by the surface oxide layer, the aged Co–Mo (3:10) alloy is a promising catalyst for HER in acidic solutions.


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