Gate Oxide Defect Analysis Using Scanning Electron Microscopy (SEM)/Metal Oxide Semiconductor (MOS)/Electron Beam Induced Current (EBIC) with Sub-Nano Ampere Current Breakdown

1998 ◽  
Vol 63-64 ◽  
pp. 395-406 ◽  
Author(s):  
M. Tamatsuka ◽  
K. Miki
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Induced Current ◽  
Defect Analysis ◽  
Electron Beam Induced Current ◽  
Scanning Electron

New Paradigm for EBIC Amplifier on FIB X-section

2019 ◽  
Author(s):  
Valerio Sanna Valle ◽  
Guy Perez ◽  
Guillaume Bascoul ◽  
Helene Chauvin ◽  
Benoît Viallet ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Induced Current ◽  
New Paradigm ◽  
Time Resolved ◽  
Imaging Mode ◽  
Electron Beam Induced Current ◽  
Sem Imaging ◽  
Scanning Electron

Abstract Electron Beam Induced Current is a powerful tool for Scanning Electron Microscopy (SEM) imaging mode. In this paper, the history and evolution of this technique are discussed. Some important defects are presented as well as their technological interpretation. A new custom amplifier is presented and its implementation in Time Resolved EBIC (TREBIC) is also proposed, the main differences with EBIC are pointed out.

The Gettering and Electrical Activity of Ni, Au, and Cu in Epitaxial Si/Si(2%Ge)/Si during RTA

1991 ◽  
Vol 224 ◽  
Author(s):  
Tian-Qun Zhou ◽  
Andrzej Buczkowski ◽  
Zbigniew Radzimski ◽  
George A. Rozgonyi
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electrical Activity ◽  
Misfit Dislocations ◽  
Induced Current ◽  
Near Surface ◽  
Transmission Electron ◽  
Electron Beam Induced Current ◽  
Metallic Impurities ◽  
Scanning Electron

AbstractA study of gettering and electrical activity of metallic impurities Ni, Au and Cu has been carried out on epitaxial Si/Si(2%Ge)/Si wafers containing interfacial misfit dislocations. The impurities were intentionally introduced from a backside deposited thin metal followed by rapid thermal annealing (RTA). Transmission Electron Microscopy (TEM) results indicate that the impurities were gettered along the misfit dislocations in near-surface regions either as Au precipitate colonies, or as NiSi2 and CuSi silicide precipitates. Data from Scanning Electron Microscopy (SEM) in the Electron Beam Induced Current (EBIC) mode revealed that these precipitates dominate the recombination properties of the initially inactive misfit dislocation.

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