Fabrication of Metallic Thin Films by ArF Eximer Laser Induced CVD Method Using Supersonic Molecular Beam.

Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics. We show that a newly developed CVD method, where plasma electrons are used as the reducing agent in deposition of metallic thin films, is inherently area selective from the electrical resistivity of the substrate surface. When depositing iron with the new CVD method, no film is deposited on high-resistivity SiO2 surfaces whereas several hundred nm thick iron films are deposited on areas with low resistivity, obtained by adding a thin layer of silver on the SiO2 surface. Based on such a scheme, we show how to use the electric resistivity of the substrate surface as an extension of the ASD toolbox for metal-on-metal deposition.

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Supersonic molecular beam deposition of pentacene thin films on two Ag(111) surfaces with different step densities

Physical Review B ◽

10.1103/physrevb.72.085404 ◽

2005 ◽

Vol 72 (8) ◽

Cited By ~ 31

Author(s):

M. F. Danışman ◽

L. Casalis ◽

G. Scoles

Keyword(s):

Thin Films ◽

Molecular Beam ◽

Supersonic Molecular Beam ◽

Molecular Beam Deposition ◽

Beam Deposition

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Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

10.26434/chemrxiv.13717783.v1 ◽

2021 ◽

Author(s):

Hama Nadhom ◽

Robert Boyd ◽

Polla Rouf ◽

Daniel Lundin ◽

Henrik Pedersen

Keyword(s):

Thin Films ◽

Electrical Resistivity ◽

Substrate Surface ◽

Electric Resistivity ◽

High Resistivity ◽

Metallic Thin Films ◽

Selective Deposition ◽

Iron Films ◽

Cvd Method ◽

Metal On Metal

Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics. We show that a newly developed CVD method, where plasma electrons are used as the reducing agent in deposition of metallic thin films, is inherently area selective from the electrical resistivity of the substrate surface. When depositing iron with the new CVD method, no film is deposited on high-resistivity SiO2 surfaces whereas several hundred nm thick iron films are deposited on areas with low resistivity, obtained by adding a thin layer of silver on the SiO2 surface. Based on such a scheme, we show how to use the electric resistivity of the substrate surface as an extension of the ASD toolbox for metal-on-metal deposition.

Download Full-text

Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

10.26434/chemrxiv.13717783.v2 ◽

2021 ◽

Author(s):

Hama Nadhom ◽

Robert Boyd ◽

Polla Rouf ◽

Daniel Lundin ◽

Henrik Pedersen

Keyword(s):

Thin Films ◽

Electrical Resistivity ◽

Substrate Surface ◽

Electric Resistivity ◽

High Resistivity ◽

Metallic Thin Films ◽

Selective Deposition ◽

Iron Films ◽

Cvd Method ◽

Metal On Metal

Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics. We show that a newly developed CVD method, where plasma electrons are used as the reducing agent in deposition of metallic thin films, is inherently area selective from the electrical resistivity of the substrate surface. When depositing iron with the new CVD method, no film is deposited on high-resistivity SiO2 surfaces whereas several hundred nm thick iron films are deposited on areas with low resistivity, obtained by adding a thin layer of silver on the SiO2 surface. Based on such a scheme, we show how to use the electric resistivity of the substrate surface as an extension of the ASD toolbox for metal-on-metal deposition.

Download Full-text