Dry Phosphorus silicate glass etching and surface conditioning and cleaning for multi-crystalline silicon solar cell processing

2021 ◽  
Vol 3 (1) ◽  
Author(s):  
Ahmed S Kagilik
Keyword(s):  
Solar Cell ◽  
Silicate Glass ◽  
Chemical Etching ◽  
Cell Performance ◽  
Wafer Surface ◽  
Plasma Cleaning ◽  
Solar Cell Performance ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Cleaning Treatment

As an alternative to the wet chemical etching method, dry chemical etching processes for Phosphorus silicate glass [PSG} layer rel11ova] using Tri?uormethane/Sulfur Hexafluoride (CHF3/ SF6) gas mixture in commercial silicon-nitride plasma enhanced chemical vapour deposition (SiN-PECVD) system is applied. The dependence of the solar cell performance on the etching temperature is investigated and optimized. It is found that the SiN-PECVD system temperature variation has a signi?cant impact on the whole solar cell characteristics. A dry plasma cleaning treatment of the Si wafer surface after the PSG removal step is also investigated and developed. The cleaning step is used to remove the polymer ?lm which is formed during the PSG etching using both oxygen and hydrogen gases. By applying an additional cleaning step, the polymer ?lm deposited on the silicon wafer surface after PSG etching is eliminated. The effect of different plasma cleaning conditions on solar cell performance is investigated. After optimization of the plasma operating conditions, the performance of the solar cell is improved and the overall gain in ef?ciency of 0.6 % absolute is yielded compared to a cell without any further cleaning step. On the other hand, the best solar cell characteristics can reach values close to that achieved by the conventional wet chemical etching processes demonstrating the effectiveness of the additional O2/H2 post cleaning treatment. 

Numerical Simulation of an Entire Wafer Surface during Ozone-Based Wet Chemical Etching

2020 ◽  
Vol 59 (40) ◽  
pp. 17680-17688
Author(s):  
Lena Mohr ◽  
Tobias Dannenberg ◽  
Anamaria Moldovan ◽  
Martin Zimmer ◽  
Claas Müller
Keyword(s):  
Numerical Simulation ◽  
Chemical Etching ◽  
Wafer Surface ◽  
Wet Chemical ◽  
Wet Chemical Etching

scholarly journals Study of Black Silicon Wafer through Wet Chemical Etching for Parametric Optimization in Enhancing Solar Cell Performance by PC1D Numerical Simulation

Crystals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 881
Author(s):  
Md. Yasir Arafat ◽  
Mohammad Aminul Islam ◽  
Ahmad Wafi Bin Mahmood ◽  
Fairuz Abdullah ◽  
Tiong Sieh Kiong ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Refractive Index ◽  
Solar Cell ◽  
Doping Concentration ◽  
Anisotropic Etching ◽  
Cell Performance ◽  
Etching Process ◽  
Black Silicon ◽  
Solar Cell Performance ◽  
Wet Chemical

Black silicon (BSi) fabrication via surface texturization of Si-wafer in recent times has become an attractive concept regarding photon trapping and improved light absorption properties for photovoltaic applications. In this study, surface texturization has been conducted on mono-crystalline Si(100) wafer using a wet chemical anisotropic etching process with IPA:KOH solution to form micro-pyramidal surface structures. Moreover, the optimized properties of the fabricated BSi wafers are used for numerical simulation using PC1D software to analyze the performance of the solar cell and establish the correlation among relevant parameters. Effects such as doping concentration, texturization, passivation, and anti-reflection coating of BSi on the solar cell performance have numerically been investigated. Results show that textured surface obtained from the wet chemical anisotropic etching process has successfully reduced the reflectance of the BSi wafer and surpassed the solar cell efficiency by 2%, which is mainly attributed to the optical confinement of the textured pyramids on the surface with a height of 1–2 μm and angles of 70 degrees. Furthermore, the doping concentration of the p-type wafer and n-type emitter were optimized to be 1 × 1016 cm−3 and 1 × 1018 cm−3, respectively. In the case of device optimization, the SiO2 passivation layer with a refractive index of 1.48 and the Si3N4 ARC layer with a refractive index of 2.015 has been identified as the best combination for the solar cell performance. These optimized parameters eventually result in 23.14% conversion efficiency from numerical simulation for solar cells that use black silicon wafers as fabricated in this study.

Defects in Epitaxial lift-off Thin Si Films/Wafers and Their Influence on the Solar Cell Performance

2014 ◽  
Vol 1666 ◽  
Author(s):  
Bhushan Sopori ◽  
Srinivas Devayajanam ◽  
Prakash Basnyat ◽  
Helio Moutinho ◽  
Robert Reedy ◽  
...  
Keyword(s):  
Solar Cell ◽  
Stacking Faults ◽  
Cell Performance ◽  
Wafer Surface ◽  
Solar Cell Performance ◽  
Cell Efficiency ◽  
Average Dislocation Density ◽  
Local Stresses ◽  
Lift Off ◽  
Si Films

ABSTRACTIn this paper, we will describe the nature of defects and impurities in thick epitaxial-Si layers and their influence on the cell efficiency. These wafers have very low average dislocation density. Stacking faults (SFs) are the main defect in epi layers. They can occur in many configurations—be isolated, intersecting, and nested. When nested, they can be accompanied by formation of coherent twins resulting in dendritic growth, with pyramids protruding out of the wafer surface. Such pyramids create large local stresses and punch out dislocations. The main mechanism of dislocation formation is through pyramids. Stacking faults degrade solar cell performance. Analyses of the solar cells have revealed that the nested SFs have a controlling effect on the solar cell performance. A well-controlled growth can minimize defect generation and produce wafers that can yield cell efficiencies close to 20%.

Improved CdTe Solar-Cell Performance by Plasma Cleaning the TCO Layer

2013 ◽  
Vol 3 (2) ◽  
pp. 838-842 ◽  
Author(s):  
Drew E. Swanson ◽  
Russell M. Geisthardt ◽  
J. Tyler McGoffin ◽  
John D. Williams ◽  
James R. Sites
Keyword(s):  
Solar Cell ◽  
Cell Performance ◽  
Plasma Cleaning ◽  
Solar Cell Performance ◽  
Cdte Solar Cell

Experimental and Theoretical Comparable Study of Pure and Zinc Porphyrin Surface Modified ZnO Nanorod Arrays for Hybrid Solar Cell Applications

2020 ◽  
pp. 114-119
Keyword(s):  
Solar Cell ◽  
Electrochemical Impedance ◽  
Hybrid Solar Cell ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Annealing Effects ◽  
Vertically Aligned ◽  
Surface Modified

Experimental and theoretical study Porphyrin-grafted ZnO nanowire arrays were investigated for organic/inorganic hybrid solar cell applications. Two types of porphyrin – Tetra (4-carboxyphenyle) TCPP and meso-Tetraphenylporphine (Zinc-TPP)were used to modify the nanowire surfaces. The vertically aligned nanowires with porphyrin modifications were embedded in graphene-enriched poly (3-hexylthiophene) [G-P3HT] for p-n junction nanowire solar cells. Surface grafting of ZnO nanowires was found to improve the solar cell efficiency. There are different effect for the two types of porphyrin as results of Zn existing. Annealing effects on the solar cell performance were investigated by heating the devices up to 225 °C in air. It was found that the cell performance was significantly degraded after annealing. The degradation was attributed to the polymer structural change at high temperature as evidenced by electrochemical impedance spectroscopy measurements.

Decapsulation Techniques for Cu Wire Bonding Package

2009 ◽  
Author(s):  
Dongmei Meng ◽  
Joe Rupley ◽  
Chris McMahon
Keyword(s):  
Laser Ablation ◽  
Thin Layer ◽  
Chemical Etching ◽  
Wire Bonding ◽  
Methods And Techniques ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Reliability Issue ◽  
Etch Time ◽  
Device Technology

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.

scholarly journals Controlling the Facet of ZnO during Wet Chemical Etching Its (0001) O‐Terminated Surface

Small ◽  
2020 ◽  
Vol 16 (51) ◽  
pp. 2007045
Author(s):  
Mei Sun ◽  
Bocheng Yu ◽  
Mengyu Hong ◽  
Zhiwei Li ◽  
Fengjiao Lyu ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching
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