Problems of Learning Fundamentals of Semiconductor Electronics

2005 ◽  
Vol 1 (2) ◽  
pp. 3-17 ◽  
Author(s):  
Farrah Fayyaz ◽  
M. Ashraf Iqbal ◽  
Yasser Hashmi
2015 ◽  
Author(s):  
Steven R. Brueck ◽  
Ganesh Balakrishnan

Sensors ◽  
2019 ◽  
Vol 19 (18) ◽  
pp. 3815
Author(s):  
Renyun Zhang ◽  
Magnus Hummelgård ◽  
Joel Ljunggren ◽  
Håkan Olin

Metal-semiconductor junctions and interfaces have been studied for many years due to their importance in applications such as semiconductor electronics and solar cells. However, semiconductor-metal networks are less studied because there is a lack of effective methods to fabricate such structures. Here, we report a novel Au–ZnO-based metal-semiconductor (M-S)n network in which ZnO nanowires were grown horizontally on gold particles and extended to reach the neighboring particles, forming an (M-S)n network. The (M-S)n network was further used as a gas sensor for sensing ethanol and acetone gases. The results show that the (M-S)n network is sensitive to ethanol (28.1 ppm) and acetone (22.3 ppm) gases and has the capacity to recognize the two gases based on differences in the saturation time. This study provides a method for producing a new type of metal-semiconductor network structure and demonstrates its application in gas sensing.


Author(s):  
Rozina Abdul Rani ◽  
Ahmad Sabirin Zoolfakar ◽  
Mohamad Fauzee Mohamad Ryeeshyam ◽  
Naiwa Ezira Ahmed Azhar ◽  
Mohamad Hafiz Mamat ◽  
...  

2005 ◽  
Vol 175 (6) ◽  
pp. 629 ◽  
Author(s):  
Boris P. Zakharchenya ◽  
Vladimir L. Korenev

2002 ◽  
Vol 51 (9) ◽  
pp. 999-1004
Author(s):  
Hiroo KINOSHITA ◽  
Takeo WATANABE ◽  
Kazuhiro HAMAMOTO ◽  
Harushige TSUBAKINO

2021 ◽  
Vol 2057 (1) ◽  
pp. 012111
Author(s):  
A A Barinov ◽  
V I Khvesyuk

Abstract Because of the rapid development of semiconductor electronics and the tendency to size reduction of the elements of transistors, there is an urgent task of assessing the heat transfer regime, which determines the ability to maintain the required thermal regime. In this work, the heat transfer in micro- and nanostructures in silicon is considered, and a comprehensive analysis of factors determining the heat transfer regime is carried out. In particular, the effect of the interaction of phonons with the sample boundaries in the quasi-ballistic and ballistic heat transfer regimes, where these processes play a decisive role, is evaluated using statistical model of phonon scattering on rough boundaries of samples.


1986 ◽  
Vol 32 (9) ◽  
pp. 680
Author(s):  
A.P. Dorey

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