Implementing variable energy positron lifetime spectroscopy based on secondary electron timing from thin carbon foil in transmission geometry

2014 ◽  
Author(s):  
Cheuk-kwong Ng
Keyword(s):  
Secondary Electron ◽  
Positron Lifetime ◽  
Carbon Foil ◽  
Thin Carbon ◽  
Transmission Geometry ◽  
Positron Lifetime Spectroscopy ◽  
Variable Energy

Positron Pulsing System for Variable Energy Positron Lifetime Spectroscopy

1992 ◽  
Vol 105-110 ◽  
pp. 1993-1996 ◽  
Author(s):  
Ryoichi Suzuki ◽  
Yoshinori Kobayashi ◽  
Tomohisa Mikado ◽  
Hideaki Ohgaki ◽  
M. Chiwaki ◽  
...  
Keyword(s):  
Positron Lifetime ◽  
Positron Lifetime Spectroscopy ◽  
Variable Energy

Nanometer-scale voids in PECVD silicon-oxide films probed by variable-energy positron lifetime spectroscopy:

2001 ◽  
Vol 60 (4-5) ◽  
pp. 545-549 ◽  
Author(s):  
C.L. Wang ◽  
Y. Kobayashi ◽  
K. Hirata ◽  
R. Suzuki ◽  
T. Ohdaira ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Positron Lifetime ◽  
Oxide Films ◽  
Nanometer Scale ◽  
Positron Lifetime Spectroscopy ◽  
Variable Energy

Slow Positron Pulsing System for Variable Energy Positron Lifetime Spectroscopy

1991 ◽  
Vol 30 (Part 2, No. 3B) ◽  
pp. L532-L534 ◽  
Author(s):  
Ryoichi Suzuki ◽  
Yoshinori Kobayashi ◽  
Tomohisa Mikado ◽  
Hideaki Ohgaki ◽  
Mitsukuni Chiwaki ◽  
...  
Keyword(s):  
Positron Lifetime ◽  
Slow Positron ◽  
Positron Lifetime Spectroscopy ◽  
Variable Energy

A Study of Defects in Czochralski-Grown Silicon by Positron Annihilation Spectroscopy

1992 ◽  
Vol 262 ◽  
Author(s):  
S. C. Sharma ◽  
N. Hozhabri ◽  
R. G. Hyer ◽  
T. Hossain ◽  
S. Kim ◽  
...  
Keyword(s):  
Positron Lifetime ◽  
Single Crystal Silicon ◽  
Positron Beam ◽  
Positron Annihilation Spectroscopy ◽  
Doppler Broadening ◽  
Crystal Silicon ◽  
Different Depths ◽  
Positron Lifetime Spectroscopy ◽  
Doppler Broadening Spectra ◽  
Variable Energy

ABSTRACTWe have studied defects in Cz-grown single crystal silicon by utilizing a variable energy positron beam and positron lifetime spectroscopy in conjunction with surface photovoltage measurements. We present results for the depth profile of defects obtained from the Doppler broadening spectra measured by implanting variable energy positrons at different depths ranging from the surface down to ∼ 1 /xm deep. We have also measured positron lifetime spectra at different locations on a wafer and have obtained a radial variation in the density of the vacancy-type defects.

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