scholarly journals Effect of Prebaking Temperature on Structure and Ferroelectric Properties of PZT Thin Films Prepared by Sol-Gel Method

1996 ◽  
Vol 64 (11) ◽  
pp. 1166-1173
Author(s):  
Sachiko ONO ◽  
Masakatsu MAEDA ◽  
Tetsuya OSAKA ◽  
Ichiro KOIWA ◽  
Takao KANEHIRA ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method

Preparation of Al Doped PZT Thin Films Using a Sol-Gel Method

1999 ◽  
Vol 596 ◽  
Author(s):  
T. Iijima ◽  
N. Sanada ◽  
K. Hiyama ◽  
H Tsuboi ◽  
M. Okada
Keyword(s):  
Thin Films ◽  
Cell Structure ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Reduction Rate ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Al Content ◽  
Capacitor Cell

AbstractAl substitution for Zr/Ti site of PZT was attempted using a sol-gel method, and the ferroelectric properties of 200nm-thick Al doped PZT thin films were compared with those of non- doped PZT film. The leakage current of the thin films decreased with increasing Al content. Ps and Pr also decreased with increasing Al content, whereas Ec did not show a significant change. Furthermore, a simple capacitor cell structure like FeRAM was prepared using a seed layer process. The capacitor structure was Pb(Ti0.975Al0.025)O3/ Pb1.1((Zr0.52Ti0.48)0. 975Al0.025)O3/ Pb(Ti0.975Al0.025)O3, and 2Pr was 26μC/cm2. The fatigue properties of the A1 doped PZT capacitor cell showed a little improvement, because the reduction rate of the fatigue was smaller than that of non-doped PZT thin film.

PZT Thin Films Synthesis by Sol-Gel Method and Study of Local Ferroelectric Properties

2013 ◽  
Vol 442 (1) ◽  
pp. 95-100 ◽  
Author(s):  
M. V. Silibin ◽  
A. A. Dronov ◽  
S. A. Gavrilov ◽  
V. V. Smirnov ◽  
D. A. Kiselev ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method

Characterization of Textured PZT Thin Films Prepared by Sol-gel Method onto Stainless Steel Substrates

2011 ◽  
Vol 1299 ◽  
Author(s):  
Xuelian Zhao ◽  
Xufang Yu ◽  
Shengwen Yu ◽  
Jinrong Cheng
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Buffer Layers ◽  
Sem Images ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Ss Substrates

ABSTRACTPbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) buffered stainless steel (SS) substrates by sol-gel method. The effect of LNO buffer layer on the orientation and electric properties of PZT thin films for different thicknesses were studied. X-ray diffraction (XRD) results indicated that PZT thin films on SS substrates exhibit the (100) preferred orientation with the LNO buffer layers. Scanning electron microscope (SEM) images show that PZT thin films were well crystallized with grain size of about 100 nm. PZT thin films deposited on SS maintain the excellent ferroelectric properties with remnant polarization of about 20 μC/cm2.

Microstructure and ferroelectric properties of compositionally graded Nd-doped Bi4Ti3O12 thin films prepared by sol–gel method

2012 ◽  
Vol 23 (9) ◽  
pp. 1711-1714 ◽  
Author(s):  
Changyong Liu ◽  
Yiping Gong ◽  
Dongyun Guo ◽  
Chuanbin Wang ◽  
Qiang Shen ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

Effect of Tb content on microstructure and ferroelectric properties of Bi4−x Tb x Ti3O12 thin films grown by sol–gel method

2012 ◽  
Vol 64 (3) ◽  
pp. 711-717 ◽  
Author(s):  
Ling Pei ◽  
Ni Hu ◽  
Gang Deng ◽  
Yiwan Chen ◽  
Yeguang Bie ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method

2010 ◽  
Vol 663-665 ◽  
pp. 650-653
Author(s):  
Jin Moo Byun ◽  
Jeong Sun Han ◽  
Jae Hyoung Park ◽  
Seong Eui Lee ◽  
Hee Chul Lee
Keyword(s):  
Thin Films ◽  
Piezoelectric Coefficient ◽  
Energy Harvester ◽  
Sol Gel ◽  
Pure Perovskite Structure ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Si Substrates ◽  
Pzt Thin Film

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

Device effects of various Zr/Ti ratios of PZT thin-films prepared by sol-gel method

1992 ◽  
Vol 1 (2-4) ◽  
pp. 293-304 ◽  
Author(s):  
H. Watanabe ◽  
T. Mihara ◽  
C. A. Paz De Araujo
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method

Preparation and ferroelectric properties of Bi3.4Ce0.6Ti3O12 thin films grown by sol-gel method

2008 ◽  
Vol 51 (1) ◽  
pp. 10-15 ◽  
Author(s):  
DongYun Guo ◽  
MeiYa Li ◽  
Jun Liu ◽  
BenFang Yu ◽  
Ling Pei ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method
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