scholarly journals Optoelectronic Properties of F-co-doped PTO Thin Films Deposited by Spray Pyrolysis

2013 ◽  
Vol 3 (4) ◽  
pp. 91-99 ◽  
Author(s):  
Odari Benjamin Victor ◽  
Musembi Robinson Juma ◽  
Mageto Maxwell Joel ◽  
Othieno Herick ◽  
Gaitho Francis ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Optoelectronic Properties ◽  
Co Doped

Improved optoelectronic properties of yttrium co-doped CdO:Zn thin films fabricated by nebulizer spray pyrolysis method for TCO applications

2021 ◽  
Author(s):  
R. Sarath Babu ◽  
Y. Narasimha Murthy ◽  
I Loyola Poul Raj ◽  
M. S. Revathy ◽  
Natarajan Chidhambaram ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Optoelectronic Properties ◽  
Spray Pyrolysis Method ◽  
Pyrolysis Method ◽  
Nebulizer Spray Pyrolysis ◽  
Nebulizer Spray ◽  
Co Doped

Enhancement in optoelectronic properties of lanthanum co-doped CdO: Zn thin films for TCO applications

2021 ◽  
pp. 107097
Author(s):  
R. Sarath babu ◽  
Y. Narasimha murthy ◽  
S. Vinoth ◽  
R.S. Rimal Isaac ◽  
P. Mohanraj ◽  
...  
Keyword(s):  
Thin Films ◽  
Optoelectronic Properties ◽  
Co Doped

Optoelectronic Properties of Fluorine and Cobalt Co-Doped Tin Oxide Thin Films Deposited by Chemical Spray Pyrolysis

2019 ◽  
Vol 60 ◽  
pp. 63-75 ◽  
Author(s):  
Naoual Houaidji ◽  
Mejda Ajili ◽  
Baghdadi Chouial ◽  
Najoua Turki Kamoun ◽  
Kenza Kamli ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Carrier Concentration ◽  
Tin Oxide ◽  
Hall Mobility ◽  
Spray Pyrolysis Method ◽  
Chemical Spray Pyrolysis ◽  
Glass Substrates ◽  
Chemical Spray ◽  
Co Doped

Transparent conducting Cobalt-fluorine co-doped tin oxide (SnO2: (Co, F)) thin filmswere deposited onto preheated glass substrates using the chemical spray pyrolysis method. The ([Co2+]/[Sn4+]) atomic concentration ratio (y)in the spray solution was varied between 0 and 5 at. %. The structural, electrical, optical and photoluminescence properties of these films were studied. It is found that the thin films are polycrystalline with a tetragonal crystal structure corresponding to SnO2 phase having a preferred orientation along the (200) plane. Transmission and reflection spectra reveal the presence of interference fringes indicating thickness uniformity and surface homogeneity of the deposited thin films. The electrical resistivity (ρ), volume carrier concentration density (Nv), surface carrier concentration density (Ns) and Hall mobility (μ) of the synthesized thin films were determined from the Hall Effect measurements in the Van der Paw-configuration and the following results were obtained: n-type conductivity in all deposited films, a low resistivity of 1.16×10-2 Ω.cm, and a high Hall mobility of 15.13×102 cm2.V-1.s-1with Co concentration equals to 3 at. %. These results show that the electrical properties of these thin films where greatly improved making them suitable as ohmic contact in photovoltaic application devices.

Elaboration and characterization of Co-doped ZnO thin films deposited by spray pyrolysis technique

2009 ◽  
Vol 40 (2) ◽  
pp. 265-267 ◽  
Author(s):  
Y. Belghazi ◽  
M. Ait Aouaj ◽  
M. El Yadari ◽  
G. Schmerber ◽  
C. Ulhaq-Bouillet ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Co Doped

Structural and Optical Properties of Co-doped HfO2 Multi-layer Deposited by Spray Pyrolysis Technique

2016 ◽  
Vol 1817 ◽  
Author(s):  
R. M. Radamés ◽  
J. Guzmán Mendoza ◽  
A. Valderrama Z ◽  
L. Lartundo-Rojas ◽  
J. A. Díaz Góngora
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Spray Pyrolysis ◽  
Rare Earths ◽  
Spray Pyrolysis Technique ◽  
Ultrasonic Spray Pyrolysis ◽  
Hafnium Dioxide ◽  
Average Roughness ◽  
Spectral Ellipsometry ◽  
Co Doped

ABSTRACTThe optical and structural properties of co-doped HfO2 thin films with rare earth trivalent ions prepared by ultrasonic spray pyrolysis technique, are reported. An arrangement of multi-layer (Si-SiO2-HfO2:Eu3+-HfO2:Tb3+-HfO2:Tm3+-SiO2) were deposited on silicon substrates at temperatures from 400 to 550°C, using acetyl acetonates as precursory reagents. A refractive index value of 2.1 was determined by spectral ellipsometry. The surface morphology was obtained by AFM measurements. For 50 to 550 nm thickness films, an average roughness value of ∼56.8 Å was obtained for different substrate temperatures and grown deposition times. EDS measurements showed the presence of hafnium, and rare earths dopants as elemental composition. XPS measurements demonstrated that hafnium and rare earths oxidation species are formed at hafnium dioxide thin films. Photoluminescence emission spectra of multi-layer structures present characteristic emission peaks associated with Tb+3, Eu3+, and Tm3+ dopants. The results presented above motivate us to consider that these multilayer structures could be appropriate to be used as a rare earth host to improve optical emission.

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