Study on nanostructure evaluation of silicon carbide derived porous carbon and its application for capacitor electrode

The porous carbon preforms with fine pore structure has been successfully fabricated by room temperature freezing casting, and the reaction formed SiC with fine mechanical property has prepared successfully by liquid silicon infiltration process. Charcoal powder was used as carbon resource, camphene was used as sublimate vehicle, methyl cellulose was used as pore maker and bonder. The result shows that the homogeneity of the porous carbon preform has been improved largely by adding methyl cellulose ,and the defects of reaction formed silicon carbide has reduced largely also. The density, average flexural strength and Weibull modulus of the best reaction formed silicon carbide prepared in this paper is 2.86 g/cm3, 430.75MPa and 9.29 respectively.

Download Full-text

Biomass-derived hierarchical porous carbon/silicon carbide composite for electrochemical supercapacitor

Colloids and Surfaces A Physicochemical and Engineering Aspects ◽

10.1016/j.colsurfa.2021.126567 ◽

2021 ◽

pp. 126567

Author(s):

Qin Tang ◽

Xianyong Chen ◽

Dali Zhou ◽

Can Liu

Keyword(s):

Silicon Carbide ◽

Porous Carbon ◽

Hierarchical Porous Carbon ◽

Electrochemical Supercapacitor ◽

Carbide Composite ◽

Hierarchical Porous

Download Full-text

Growth of Silicon Carbide Nanolayers on Contact of Porous Carbon with Molten Silicon

Journal of Engineering Physics and Thermophysics ◽

10.1007/s10891-017-1663-1 ◽

2017 ◽

Vol 90 (5) ◽

pp. 1102-1106 ◽

Cited By ~ 3

Author(s):

P. S. Grinchuk ◽

H. M. Abuhimd ◽

S. P. Fisenko ◽

Yu. A. Khodyko

Keyword(s):

Silicon Carbide ◽

Porous Carbon ◽

Molten Silicon

Download Full-text

Boron Nitride Coatings on Silicon Carbide Whiskers

MRS Proceedings ◽

10.1557/proc-458-421 ◽

1996 ◽

Vol 458 ◽

Cited By ~ 1

Author(s):

Steven Brown ◽

Richard Partch

Keyword(s):

Silicon Carbide ◽

Boron Nitride ◽

Porous Carbon ◽

Carbon Layer ◽

Silicon Oxynitride ◽

Sodium Borate ◽

Time Control ◽

Silicon Carbide Whiskers ◽

Novel Processing

ABSTRACTBoron nitride thin films have been produced on silicon carbide whiskers (SiCw) by a novel processing method. A polydivinylbenzene (PDVB) coating was formed in situ on the whisker surface which was subsequently thermally degraded creating a highly porous carbon layer. The total available pore volume of the carbon layer/ SiCw system (SiCwC) was varied by controlling the quantity of PDVB adsorbed. Next, anhydrous sodium borate was mixed with the SiCwC, and upon heating, the precursor melted and absorbed into the porous carbon layer followed by nitridation with anhydrous ammonia. Under certain reaction conditions, silicon oxynitride was also produced as a sublayer. The amount of the latter can be controlled by varying the reaction temperature and time. Control over the thickness of the BN film was achieved by varying the amount of the carbonized polymer layer in proportion to the quantity of sodium borate.

Download Full-text