6. WINTER SOLDIERS OF THE DARK SIDE: CIA Whistleblowers and National Security Dissent

2019 ◽  
pp. 153-186
Keyword(s):  
2020 ◽  
Vol 13 (3) ◽  
pp. 313-341
Author(s):  
Yan Xuetong

Abstract The year 2019 saw the curtain rise on a US–China bipolar rivalry quite different from the Cold War US–Soviet bipolarity. The fundamental difference between the current bipolar rivalry and that during the Cold War is that ideology is no longer the main engine driving international competition, but rather the new digital dimension of strategic competition that is emerging between the United States and China. Technological advancement over the past 15 years has led world history’s entry into the early digital age. The development of digital technology has created new ways of protecting national security, of accumulating national wealth, and of obtaining international support. Cybersecurity is becoming the core of national security and the share of digital economy in major powers’ gross domestic product dramatically increases. For the leading powers, strategic competition in cyberspace in this early digital age outstrips to a crucial extent that within physical geographic boundaries. This article observes that Cold War mentality and digital mentality will have mixed impact on foreign policy-making in the digital age, and that interactions between the nations whose foreign policy is simultaneously influenced by both mentalities will shape the emerging international order into one of uneasy peace, where there is no direct war and few proxy wars. It will rather be a scenario reflecting the dark side of globalization and downside of global governance, evident in the violation of agreements, double dealing, cyber-attacks, and technology decoupling between states. Although further digital advancement will indeed change international politics in ever more aspects, US–China bipolar configuration will nevertheless remain in place for at least for two decades, or perhaps longer.


Author(s):  
P.M. Rice ◽  
MJ. Kim ◽  
R.W. Carpenter

Extrinsic gettering of Cu on near-surface dislocations in Si has been the topic of recent investigation. It was shown that the Cu precipitated hetergeneously on dislocations as Cu silicide along with voids, and also with a secondary planar precipitate of unknown composition. Here we report the results of investigations of the sense of the strain fields about the large (~100 nm) silicide precipitates, and further analysis of the small (~10-20 nm) planar precipitates.Numerous dark field images were analyzed in accordance with Ashby and Brown's criteria for determining the sense of the strain fields about precipitates. While the situation is complicated by the presence of dislocations and secondary precipitates, micrographs like those shown in Fig. 1(a) and 1(b) tend to show anomalously wide strain fields with the dark side on the side of negative g, indicating the strain fields about the silicide precipitates are vacancy in nature. This is in conflict with information reported on the η'' phase (the Cu silicide phase presumed to precipitate within the bulk) whose interstitial strain field is considered responsible for the interstitial Si atoms which cause the bounding dislocation to expand during star colony growth.


2006 ◽  
Vol 40 (12) ◽  
pp. 30
Author(s):  
BARBARA J. HOWARD
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document