Quantum Mechanical Corrected Simulation Program with Integrated Circuit Emphasis Model for Simulation of Ultrathin Oxide Metal-Oxide-Semiconductor Field Effect Transistor Gate Tunneling Current
2005 ◽
Vol 44
(4B)
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pp. 2132-2136
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1997 ◽
Vol 36
(Part 2, No. 3A)
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pp. L264-L267
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2000 ◽
Vol 28
(5-6)
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pp. 477-483
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2021 ◽
Vol 134
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pp. 106046
Keyword(s):
2020 ◽
Vol 21
(3)
◽
pp. 339-347
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1997 ◽
Vol 9
(8)
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pp. 1143-1145
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