scholarly journals Theoretical investigation of elastic, electronic, and optical properties of zinc-blende structure GaN under high pressure

2011 ◽  
Vol 60 (11) ◽  
pp. 117103
Author(s):  
Jiao Zhao-Yong ◽  
Yang Ji-Fei ◽  
Zhang Xian-Zhou ◽  
Ma Shu-Hong ◽  
Guo Yong-Liang
2011 ◽  
Vol 324 ◽  
pp. 249-252 ◽  
Author(s):  
Nadjla Mostefai ◽  
Nadir Bouarissa ◽  
Abdelhak Belkhir

The electronic and optical properties of the MgxZn1-xS semiconductor ternary alloys crystallizing in the Zinc Blende structure are calculated using the empirical pseudopotential method (EPM) coupled with the virtual crystal approximation (VCA). The composition dependence of the direct and indirect band gap energies as well as the antisymmetric gap are investigated in the composition range 0 up to 1. Other quantities such as refractive index and coefficient of reflection are also obtained by means of different existing models. Our results are generally in good agreement with those available in the literature. The obtained informations could be useful for the feature design of blue wavelength optoelectronic devices.


2015 ◽  
Vol 29 (20) ◽  
pp. 1550103
Author(s):  
Jinhui Zhai ◽  
Jinguang Zhai ◽  
Ajun Wan

The electronic and optical properties of zinc-blende (zb)[Formula: see text]GeC have been investigated using first principles calculations based on the density functional theory (DFT). The obtained band gap of zb–GeC is 2.30[Formula: see text]eV by means of Heyd–Scuseria–Ernzerhof (HSE) functional. We have discussed the energy-dependent optical functions including dielectric constants, refractive index, absorption, reflectivity, and energy-loss spectrum in detail. The results reveal that zb–GeC has a higher static dielectric constant compared with that of zb–SiC. The optical functions are mainly associated with the interband transitions from the occupied valence bands (VBs) Ge[Formula: see text][Formula: see text] and C[Formula: see text][Formula: see text] states to Ge[Formula: see text][Formula: see text], [Formula: see text] and C[Formula: see text][Formula: see text] states of the unoccupied conduction bands (CBs).


2013 ◽  
Vol 29 (05) ◽  
pp. 929-936 ◽  
Author(s):  
GUO Lei ◽  
◽  
HU Ge ◽  
FENG Wen-Jiang ◽  
ZHANG Sheng-Tao ◽  
...  

Author(s):  
Yuqiang Li ◽  
Jingxia Liu ◽  
Peiguang Zhang ◽  
Qiang Jing ◽  
Xiaofeng Liu ◽  
...  

The pressure-induced electronic and optical properties of EuTe are investigated up to 35.6 GPa. It is found that EuTe undergoes a pressure-induced NaCl-CsCl structural transition above 13 GPa by first-principles...


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