Theoretical investigation of the elastic, electronic, thermodynamic and optical properties of the zinc-blende structure AlN under high pressure

2010 ◽  
Vol 108 (12) ◽  
pp. 1641-1648 ◽  
Author(s):  
Jiao Zhao-Yong ◽  
Ma Shu-Hong ◽  
Wang Tian-Xing ◽  
Yang Ji-Fei
1994 ◽  
Vol 72 (9-10) ◽  
pp. 681-682 ◽  
Author(s):  
K. V. Savchenko ◽  
V. V. Shchennikov

Ga2Se3 crystals with an excess of Se were grown by the Bridgman–Stockbarger method and had a defect zinc blende structure with a0 = 5.42 Å [Formula: see text] (1 Å = 10−10 m). At room temperature the resistivity was equal to (4.5 ± 1.5) × 1011 Ω cm, the thermoelectric power was (−1.1 ± 0.1) mV K−1 and the Vickers microhardness was (357 ± 9) kg mm−2. The gamma-induced conductivity was measured in the gamma-emitting power range of 3–340 rad s−1. Pressure dependencies of electrical resistance and thermoelectric power at room temperature allowed us to determine a phase transition of the semiconductor–semiconductor type at 14.2 GPa.


2001 ◽  
Vol 667 ◽  
Author(s):  
K. M. Yeung ◽  
S. G. Lu ◽  
C. L. Mak ◽  
K. H. Wong

ABSTRACTHigh-quality manganese-doped zinc sulfide (ZnS:Mn) thin films have been deposited on various substrates using pulsed laser deposition (PLD). Effects of back-filled Ar pressure and substrate temperature on the structural as well as optical properties of ZnS:Mn films were studied. Structural properties of these films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Photoluminescence (PL) and optical transmittance were used to characterize the optical properties of these films. Our results reveal that ZnS:Mn films were polycrystalline with a mixed phase structure consisting of both wurtzite and zinc-blende structure. The ratio of these two structures was strongly depended on the change of substrate temperature. Low substrate temperature facilitated the formation of zinc-blende structure while the wurtzite phase became dominant at high substrate temperature. ZnS:Mn films with preferred wurtzite structure were obtained at a substrate temperature as low as 450°C. An orange-yellow emission band was observed at ∼590 nm. As the substrate temperature increased, the peak of this PL band shifted to a shorter wavelength. Furthermore, shifts in the absorption edge and the energy gap due to the change in substrate temperature were also observed. The variation in these optical properties will be correlated to their structural change.


2011 ◽  
Vol 324 ◽  
pp. 249-252 ◽  
Author(s):  
Nadjla Mostefai ◽  
Nadir Bouarissa ◽  
Abdelhak Belkhir

The electronic and optical properties of the MgxZn1-xS semiconductor ternary alloys crystallizing in the Zinc Blende structure are calculated using the empirical pseudopotential method (EPM) coupled with the virtual crystal approximation (VCA). The composition dependence of the direct and indirect band gap energies as well as the antisymmetric gap are investigated in the composition range 0 up to 1. Other quantities such as refractive index and coefficient of reflection are also obtained by means of different existing models. Our results are generally in good agreement with those available in the literature. The obtained informations could be useful for the feature design of blue wavelength optoelectronic devices.


Sign in / Sign up

Export Citation Format

Share Document