scholarly journals Effective length of quantum confinement and polaron effect in a GaAs film

2013 ◽  
Vol 62 (19) ◽  
pp. 197302
Author(s):  
Liu Bing-Can ◽  
Li Hua ◽  
Yan Liang-Xing ◽  
Sun Hui ◽  
Tian Qiang
Keyword(s):  
Quantum Confinement ◽  
Effective Length ◽  
Gaas Film ◽  
Polaron Effect

Novel method to determine effective length of quantum confinement using fractional-dimension space approach

2015 ◽  
Vol 10 (4) ◽  
pp. 1-6 ◽  
Author(s):  
Hua Li ◽  
Bing-Can Liu ◽  
Bing-Xin Shi ◽  
Si-Yu Dong ◽  
Qiang Tian
Keyword(s):  
Quantum Confinement ◽  
Effective Length ◽  
Fractional Dimension ◽  
Novel Method ◽  
Dimension Space ◽  
Space Approach

scholarly journals Polaron effect in a GaAs film: the fraction-dimensional space approach

2013 ◽  
Vol 62 (9) ◽  
pp. 097302
Author(s):  
Wu Zhen-Hua ◽  
Li Hua ◽  
Yan Liang-Xing ◽  
Liu Bing-Can ◽  
Tian Qiang
Keyword(s):  
Dimensional Space ◽  
Gaas Film ◽  
Polaron Effect ◽  
Space Approach

Effects of substrate quality and annealing on defect structures at GaAs/Si interfaces

1987 ◽  
Vol 45 ◽  
pp. 340-341
Author(s):  
H. L. Tsai ◽  
J. W. Lee
Keyword(s):  
Growth Process ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Lattice Misfit ◽  
Device Fabrication ◽  
Silicon Substrates ◽  
Defect Structures ◽  
Gaas Film ◽  
Substrate Quality ◽  
Gaas On Si

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).

Tunable Quantum Confinement Effect on Non-volatile Thin Film Polymer Memory Device

2008 ◽  
Author(s):  
Augustin J. Hong ◽  
Kang L. Wang ◽  
Wei Lek Kwan ◽  
Yang Yang ◽  
Dayanara Parra ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Memory Device ◽  
Confinement Effect ◽  
Film Polymer ◽  
Polymer Memory

VLS Growth of Si nanowhiskers on a H-terminated Si{111} surface

1998 ◽  
Vol 536 ◽  
Author(s):  
N. Ozaki ◽  
Y. Ohno ◽  
S. Takeda ◽  
M. Hirata
Keyword(s):  
High Pressure ◽  
Growth Condition ◽  
Growth Mechanism ◽  
Quantum Confinement ◽  
Critical Value ◽  
Extended Defects ◽  
Vapor Liquid Solid ◽  
Minimum Diameter ◽  
Vls Growth ◽  
Vapor Liquid

AbstractWe have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.

Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon
Keyword(s):  
Quantum Confinement ◽  
Radiative Recombination ◽  
Ion Beam ◽  
Quantum Confinement Effect ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

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