scholarly journals Polaron effect influenced by thicknesses of GaAs film and AlxGa1−xAs substrate

2018 ◽  
Vol 1053 ◽  
pp. 012044
Author(s):  
Zhenhua Wu ◽  
Lei Chen ◽  
Qiang Tian
Keyword(s):  
2013 ◽  
Vol 62 (9) ◽  
pp. 097302
Author(s):  
Wu Zhen-Hua ◽  
Li Hua ◽  
Yan Liang-Xing ◽  
Liu Bing-Can ◽  
Tian Qiang

2013 ◽  
Vol 62 (19) ◽  
pp. 197302
Author(s):  
Liu Bing-Can ◽  
Li Hua ◽  
Yan Liang-Xing ◽  
Sun Hui ◽  
Tian Qiang

Author(s):  
H. L. Tsai ◽  
J. W. Lee

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).


2013 ◽  
Vol 59 (6) ◽  
pp. 763-768 ◽  
Author(s):  
S. Saravana Kumar ◽  
A. John Peter ◽  
Chang Kyoo Yoo

1996 ◽  
Vol 80 (12) ◽  
pp. 6980-6983 ◽  
Author(s):  
D. P. Wang ◽  
C. C. Chen ◽  
T. L. Shen ◽  
T. M. Hsu ◽  
W. C. Lee

2010 ◽  
Vol 39 (4) ◽  
pp. 630-636
Author(s):  
陈知红 CHEN Zhi-hong ◽  
方天红 FANG Tian-hong

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