Tungsten/In–Sn–O stacked source/drain electrode structure of In–Ga–Zn–O thin-film transistor for low-contact resistance and suppressing channel shortening effect
2019 ◽
Vol 58
(SB)
◽
pp. SBBJ03
◽
Keyword(s):
2018 ◽
Keyword(s):
2009 ◽
Vol 3
(7-8)
◽
pp. 239-241
◽
2011 ◽
Vol 32
(1)
◽
pp. 39-41
◽
2011 ◽
Vol 50
(2)
◽
pp. 021602
◽
Keyword(s):