Improvement of ferroelectric properties in undoped hafnium oxide thin films using thermal atomic layer deposition

2019 ◽  
Vol 58 (SD) ◽  
pp. SDDE07 ◽  
Author(s):  
Jun-Dao Luo ◽  
He-Xin Zhang ◽  
Zheng-Ying Wang ◽  
Siang-Sheng Gu ◽  
Yun-Tien Yeh ◽  
...  
2005 ◽  
Vol 15 (4) ◽  
pp. 275-280
Author(s):  
Hie-Chul Kim ◽  
Min-Wan Kim ◽  
Hyung-Su Kim ◽  
Hyug-Jong Kim ◽  
Woo-Keun Sohn ◽  
...  

2002 ◽  
Vol 418 (2) ◽  
pp. 69-72 ◽  
Author(s):  
Jaan Aarik ◽  
Jonas Sundqvist ◽  
Aleks Aidla ◽  
Jun Lu ◽  
Timo Sajavaara ◽  
...  

Nanoscale ◽  
2021 ◽  
Author(s):  
Hyo-Bae Kim ◽  
Moonyoung Jung ◽  
Youkyoung Oh ◽  
Seung Won Lee ◽  
Dongseok Suh ◽  
...  

HfO2-based ferroelectric thin films deposited via atomic layer deposition have been extensively studied as promising candidates for next-generation ferroelectric devices. The conversion of an amorphous Hf1-xZrxO2 film to the ferroelectric...


CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.


2014 ◽  
Vol 20 (7-8-9) ◽  
pp. 217-223 ◽  
Author(s):  
Timothee Blanquart ◽  
Mikko Kaipio ◽  
Jaakko Niinistö ◽  
Marco Gavagnin ◽  
Valentino Longo ◽  
...  

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