Atomic layer deposition of rare earth oxides: erbium oxide thin films from β-diketonate and ozone precursors

2004 ◽  
Vol 374 (1-2) ◽  
pp. 124-128 ◽  
Author(s):  
Jani Päiväsaari ◽  
Matti Putkonen ◽  
Timo Sajavaara ◽  
Lauri Niinistö
2014 ◽  
Vol 20 (7-8-9) ◽  
pp. 217-223 ◽  
Author(s):  
Timothee Blanquart ◽  
Mikko Kaipio ◽  
Jaakko Niinistö ◽  
Marco Gavagnin ◽  
Valentino Longo ◽  
...  

2010 ◽  
Vol 157 (10) ◽  
pp. G193 ◽  
Author(s):  
Aile Tamm ◽  
Marianna Kemell ◽  
Jekaterina Kozlova ◽  
Timo Sajavaara ◽  
Massimo Tallarida ◽  
...  

2005 ◽  
Vol 11 (10) ◽  
pp. 415-419 ◽  
Author(s):  
J. Päiväsaari ◽  
J. Niinistö ◽  
K. Arstila ◽  
K. Kukli ◽  
M. Putkonen ◽  
...  

2019 ◽  
Vol 19 (2) ◽  
pp. 525-536 ◽  
Author(s):  
Nathan A. Stafford ◽  
Rajesh Katamreddy ◽  
Laurie Guerin ◽  
Ben Feist ◽  
Christian Dussarrat ◽  
...  

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.


2005 ◽  
Vol 15 (4) ◽  
pp. 275-280
Author(s):  
Hie-Chul Kim ◽  
Min-Wan Kim ◽  
Hyung-Su Kim ◽  
Hyug-Jong Kim ◽  
Woo-Keun Sohn ◽  
...  

RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.


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