Oxygen Dispersive Diffusion Induced Bias Stress Instability in Thin Active Layer Amorphous In–Ga–Zn–O Thin-Film Transistors

2013 ◽  
Vol 6 (3) ◽  
pp. 031101 ◽  
Author(s):  
Jaewook Jeong ◽  
Gwang Jun Lee ◽  
Joonwoo Kim ◽  
Junghye Kim ◽  
Byeongdae Choi
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Bias Stress

P-25: Enhancement in Positive Bias Stress Stability of In-Ga-Zn-O Thin-Film Transistors with Vertically Graded-Oxygen-Vacancy Active Layer

2015 ◽  
Vol 46 (1) ◽  
pp. 1209-1212
Author(s):  
Yeong-gyu Kim ◽  
Seokhyun Yoon ◽  
Seonghwan Hong ◽  
Jong Sun Choi ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Positive Bias ◽  
Bias Stress

Simple Method to Enhance Positive Bias Stress Stability of In–Ga–Zn–O Thin-Film Transistors Using a Vertically Graded Oxygen-Vacancy Active Layer

2014 ◽  
Vol 6 (23) ◽  
pp. 21363-21368 ◽  
Author(s):  
Ji Hoon Park ◽  
Yeong-gyu Kim ◽  
Seokhyun Yoon ◽  
Seonghwan Hong ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Positive Bias ◽  
Simple Method ◽  
Bias Stress

The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors

2011 ◽  
Vol 32 (10) ◽  
pp. 1388-1390 ◽  
Author(s):  
Dongsik Kong ◽  
Hyun-Kwang Jung ◽  
Yongsik Kim ◽  
Minkyung Bae ◽  
Yong Woo Jeon ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Active Layer Thickness ◽  
Negative Bias ◽  
Bias Stress ◽  
Amorphous Ingazno

Amorphous InZnO:Li/ZnSnO:Li dual-active-layer thin film transistors

2019 ◽  
Vol 111 ◽  
pp. 165-169 ◽  
Author(s):  
Jinbao Su ◽  
Qi Wang ◽  
Yaobin Ma ◽  
Ran Li ◽  
Shiqian Dai ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Layer Thin Film

H2O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress

2017 ◽  
Vol 111 (7) ◽  
pp. 073506 ◽  
Author(s):  
Jianwen Yang ◽  
Po-Yung Liao ◽  
Ting-Chang Chang ◽  
Hsiao-Cheng Chiang ◽  
Bo-Wei Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress

Transistors with a Profiled Active Layer Made by Hot-Wire Cvd

1998 ◽  
Vol 507 ◽  
Author(s):  
H. Meiling ◽  
A.M. Brockhoff ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Hot Wire ◽  
Semiconductor Interface ◽  
Cross Sectional ◽  
Silicon Matrix ◽  
Bias Stress ◽  
Silicon Devices ◽  
Transmission Electron ◽  
Conducting Research

ABSTRACTIn order to obtain stable thin-film silicon devices we are conducting research on the implementation of hot-wire CVD amorphous and polycrystalline silicon in thin-film transistors, TFFs. We present results on TFTs with a profiled active layer (deposited at ≥9 Å/s), and correlate the electrical properties with the structure of the silicon matrix at the insulator/semiconductor interface, as determined with cross-sectional transmission electron microscopy. Devices prepared with an appropriate H2 dilution of SiH4 show cone-shaped crystalline inclusions. These crystals start at the interface in some cases, and in others exhibit an 80nm incubation layer prior to nucleation. The crystals in the TFTs with the incubation layer are not cone-shaped, but are rounded off. The hot-wire CVD deposited devices exhibit a high fieldeffect mobility up to 1.5 cm2V−1s−l. Also, these devices have superior stability upon continuous gate bias stress, as compared to conventional glow-discharge α-Si:H TFTs. We ascribe this to a combination of enhanced structural order of the silicon and a low hydrogen content.

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