Amorphous InZnO:Li/ZnSnO:Li dual-active-layer thin film transistors

2019 ◽  
Vol 111 ◽  
pp. 165-169 ◽  
Author(s):  
Jinbao Su ◽  
Qi Wang ◽  
Yaobin Ma ◽  
Ran Li ◽  
Shiqian Dai ◽  
...  
2013 ◽  
Vol 102 (8) ◽  
pp. 083505 ◽  
Author(s):  
Jayapal Raja ◽  
Kyungsoo Jang ◽  
Nagarajan Balaji ◽  
Woojin choi ◽  
Thanh Thuy Trinh ◽  
...  

2016 ◽  
Vol 16 (10) ◽  
pp. 10373-10379 ◽  
Author(s):  
Jongmin Kim ◽  
Pyungho Choi ◽  
Nayoung Lee ◽  
Sangsoo Kim ◽  
Byoungdeog Choi

2014 ◽  
Vol 40 (1) ◽  
pp. 2419-2425 ◽  
Author(s):  
Jia-Ling Wu ◽  
Han-Yu Lin ◽  
Bo-Yuan Su ◽  
Yu-Cheng Chen ◽  
Sheng-Yuan Chu ◽  
...  

RSC Advances ◽  
2021 ◽  
Vol 11 (29) ◽  
pp. 17910-17913
Author(s):  
Liuhui Lei ◽  
Yuanyuan Tan ◽  
Xing Yuan ◽  
Wei Dou ◽  
Jiale Zhang ◽  
...  

Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO4 (IGZO) channel are fabricated at room temperature.


2011 ◽  
Vol 58 (5(1)) ◽  
pp. 1307-1311 ◽  
Author(s):  
Kwang-Seok Jeong ◽  
Yu-Mi Kim ◽  
Jeong-Gyu Park ◽  
Seung-Dong Yang ◽  
Ho-Jin Yun ◽  
...  

2018 ◽  
Vol 39 (7) ◽  
pp. 968-973 ◽  
Author(s):  
张建东 ZHANG Jian-dong ◽  
刘贤哲 LIU Xian-zhe ◽  
张啸尘 ZHANG Xiao-chen ◽  
李晓庆 LI Xiao-qing ◽  
王磊 WANG Lei ◽  
...  

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