P-25: Enhancement in Positive Bias Stress Stability of In-Ga-Zn-O Thin-Film Transistors with Vertically Graded-Oxygen-Vacancy Active Layer

2015 ◽  
Vol 46 (1) ◽  
pp. 1209-1212
Author(s):  
Yeong-gyu Kim ◽  
Seokhyun Yoon ◽  
Seonghwan Hong ◽  
Jong Sun Choi ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Positive Bias ◽  
Bias Stress

Simple Method to Enhance Positive Bias Stress Stability of In–Ga–Zn–O Thin-Film Transistors Using a Vertically Graded Oxygen-Vacancy Active Layer

2014 ◽  
Vol 6 (23) ◽  
pp. 21363-21368 ◽  
Author(s):  
Ji Hoon Park ◽  
Yeong-gyu Kim ◽  
Seokhyun Yoon ◽  
Seonghwan Hong ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Positive Bias ◽  
Simple Method ◽  
Bias Stress

P-5: A Simple Dipping Method to Improve Positive Bias Stress Stability of In-Ga-Zn-O Thin-Film Transistors using Hydrogen Peroxide

2016 ◽  
Vol 47 (1) ◽  
pp. 1136-1139
Author(s):  
Sung Pyo Park ◽  
Hong Jae Kim ◽  
Young Jun Tak ◽  
Seonghwan Hong ◽  
Hee Jun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Hydrogen Peroxide ◽  
Thin Film Transistors ◽  
Positive Bias ◽  
Bias Stress

Abnormal positive bias stress instability of In–Ga–Zn–O thin-film transistors with low-temperature Al2O3 gate dielectric

2016 ◽  
Vol 108 (3) ◽  
pp. 033502 ◽  
Author(s):  
Yu-Hong Chang ◽  
Ming-Jiue Yu ◽  
Ruei-Ping Lin ◽  
Chih-Pin Hsu ◽  
Tuo-Hung Hou
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Positive Bias ◽  
Bias Stress ◽  
Al2o3 Gate Dielectric

Oxygen Dispersive Diffusion Induced Bias Stress Instability in Thin Active Layer Amorphous In–Ga–Zn–O Thin-Film Transistors

2013 ◽  
Vol 6 (3) ◽  
pp. 031101 ◽  
Author(s):  
Jaewook Jeong ◽  
Gwang Jun Lee ◽  
Joonwoo Kim ◽  
Junghye Kim ◽  
Byeongdae Choi
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Bias Stress
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