Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells

2013 ◽  
Vol 6 (11) ◽  
pp. 112101 ◽  
Author(s):  
Bastian Galler ◽  
Hans-Jürgen Lugauer ◽  
Michael Binder ◽  
Richard Hollweck ◽  
Yannick Folwill ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Experimental Determination ◽  
Auger Recombination ◽  
Dominant Type ◽  
Ingan Quantum Wells

scholarly journals Ultrafast and band-selective Auger recombination in InGaN quantum wells

2016 ◽  
Vol 108 (14) ◽  
pp. 141105 ◽  
Author(s):  
Kristopher W. Williams ◽  
Nicholas R. Monahan ◽  
Daniel D. Koleske ◽  
Mary H. Crawford ◽  
X.-Y. Zhu
Keyword(s):  
Quantum Wells ◽  
Auger Recombination ◽  
Ingan Quantum Wells

Experimental determination of the optimum number of quantum wells in multiwell heterolasers with radiation leakage into a substrate

2014 ◽  
Vol 40 (5) ◽  
pp. 432-434 ◽  
Author(s):  
S. M. Nekorkin ◽  
M. V. Karzanova ◽  
N. V. Dikareva ◽  
B. N. Zvonkov ◽  
V. Ya. Aleshkin
Keyword(s):  
Quantum Wells ◽  
Experimental Determination ◽  
Optimum Number

scholarly journals Determination of the piezoelectric field in InGaN quantum wells

2005 ◽  
Vol 86 (13) ◽  
pp. 131108 ◽  
Author(s):  
I. H. Brown ◽  
I. A. Pope ◽  
P. M. Smowton ◽  
P. Blood ◽  
J. D. Thomson ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Piezoelectric Field ◽  
Ingan Quantum Wells

To the Experimental Determination of the Spontaneous Polarization for the Silicon Carbide Polytypes

2013 ◽  
Vol 740-742 ◽  
pp. 459-462
Author(s):  
Sergey Yu. Davydov ◽  
Alexander A. Lebedev ◽  
O.V. Posrednik
Keyword(s):  
Silicon Carbide ◽  
Electric Field ◽  
Quantum Wells ◽  
Experimental Determination ◽  
External Electric Field ◽  
Spontaneous Polarization ◽  
Left And Right ◽  
The Difference ◽  
Local Levels

A NH/3C-SiC heterojunction and a heterostructur of the NH/3C/NH type (N = 2, 4, 6, 8) are consid-ered. Two possibilities are analyzed for heterojunctions, in which a Si or a C is the contact plane of the NH polytype. In this case, the energies of the quasi-local levels in the quantum wells at the interface will be different. With the difference of these energies measured, it is possible to determine the spon-taneous polarization inherent in the NH polytype. In the presence of a spontaneous polarization field, the quasi-local levels in the left- and right-hand quantum wells of the heterostructure have dif-ferent energies. It is shown that, if the heterostructur is placed in an external electric field, it is possible to determine the magnitude of the spontaneous polarization by calculating the different between the energies of these levels. Experimental ways to find by using the suggested theoretical scenario are discussed.

Determination of photoluminescence mechanism in InGaN quantum wells

1999 ◽  
Vol 75 (15) ◽  
pp. 2241-2243 ◽  
Author(s):  
Philippe Riblet ◽  
Hideki Hirayama ◽  
Atsuhiro Kinoshita ◽  
Akira Hirata ◽  
Takuo Sugano ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Photoluminescence Mechanism ◽  
Ingan Quantum Wells

scholarly journals Experimental determination of the Rashba coefficient in InSb/InAlSb quantum wells at zero magnetic field and elevated temperatures

2011 ◽  
Vol 23 (3) ◽  
pp. 035801 ◽  
Author(s):  
M A Leontiadou ◽  
K L Litvinenko ◽  
A M Gilbertson ◽  
C R Pidgeon ◽  
W R Branford ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Experimental Determination ◽  
Elevated Temperatures ◽  
Zero Magnetic Field
Sign in / Sign up

Export Citation Format

Share Document