Growth of GaSb and AlSb quantum dots on high-index GaAs substrates

2014 ◽  
Vol 7 (5) ◽  
pp. 055502 ◽  
Author(s):  
Takuya Kawazu ◽  
Takeshi Noda ◽  
Takaaki Mano ◽  
Yoshiki Sakuma ◽  
Hiroyuki Sakaki
Keyword(s):  
Quantum Dots ◽  
High Index ◽  
Gaas Substrates

InGaAs quantum dots grown on B-type high index GaAs substrates: surface morphologies and optical properties

2006 ◽  
Vol 17 (11) ◽  
pp. 2736-2740 ◽  
Author(s):  
B L Liang ◽  
Zh M Wang ◽  
Yu I Mazur ◽  
V V Strelchuck ◽  
K Holmes ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
High Index ◽  
Gaas Substrates ◽  
Surface Morphologies

Optical properties of self-assembled InAs quantum dots on high-index GaAs substrates

1997 ◽  
Vol 22 (1) ◽  
pp. 85-89 ◽  
Author(s):  
P.P. González-Borrero ◽  
E. Marega ◽  
D.I. Lubyshev ◽  
E. Petitprez ◽  
P. Basmaji
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
High Index ◽  
Inas Quantum Dots ◽  
Gaas Substrates ◽  
Self Assembled

Optical Characterization of CdSe Colloidal Quantum Dot/ MEH-PPV Polymer Nanocomposites Spin-cast on GaAs Substrates

2006 ◽  
Vol 939 ◽  
Author(s):  
Adrienne D. Stiff-Roberts ◽  
Abhishek Gupta ◽  
Zhiya Zhao
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Optoelectronic Devices ◽  
Photogenerated Electron ◽  
Polymer Nanocomposite ◽  
Colloidal Quantum Dots ◽  
Infrared Light ◽  
Gaas Substrates ◽  
Conducting Polymer Nanocomposite ◽  
Colloidal Quantum Dot

ABSTRACTThe motivation and distinct approach for this work is the use of intraband transitions within colloidal quantum dots for the detection of mid- (3-5 μm) and/or long-wave (8-14 μm) infrared light. The CdSe colloidal quantum dot/MEH-PPV conducting polymer nanocomposite material is well-suited for this application due to the ∼1.5 eV difference between the corresponding electron affinities. Therefore, CdSe colloidal quantum dots embedded in MEH-PPV should provide electron quantum confinement such that intraband transitions can occur in the conduction band. Further, it is desirable to deposit these nanocomposites on semiconductor substrates to enable charge transfer of photogenerated electron-hole pairs from the substrate to the nanocomposite. In this way, optoelectronic devices analogous to those achieved using Stranski-Krastanow quantum dots grown by epitaxy can be realized. To date, there have been relatively few investigations of colloidal quantum dot nanocomposites deposited on GaAs substrates. However, it is crucial to develop a better understanding of the optical properties of these hybrid material systems if such heterostructures are to be used for optoelectronic devices, such as infrared photodetectors. By depositing the nanocomposites on GaAs substrates featuring different doping characteristics and measuring the corresponding Fourier transform infrared absorbance, the feasibility of these intraband transitions is demonstrated at room temperature.

Green, yellow and bright red (In,Ga,Al)P–GaP diode lasers grown on high-index GaAs substrates

2017 ◽  
Author(s):  
N. N. Ledentsov ◽  
V. A. Shchukin ◽  
Yu. M. Shernyakov ◽  
M. M. Kulagina ◽  
A. S. Payusov ◽  
...  
Keyword(s):  
Diode Lasers ◽  
High Index ◽  
Gaas Substrates

scholarly journals PbSe quantum dots grown in a high-index, low-melting-temperature glass for infrared laser applications

2013 ◽  
Author(s):  
P. Kannan ◽  
A. Choudhary ◽  
B. Mills ◽  
V. M. Leonard ◽  
D. W. Hewak ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Melting Temperature ◽  
Infrared Laser ◽  
High Index ◽  
Laser Applications

High field magnetoluminescence spectroscopy of self-assembled (InGa)As quantum dots on high index planes

1998 ◽  
Vol 246-247 ◽  
pp. 93-96 ◽  
Author(s):  
R.K Hayden ◽  
K Uchida ◽  
N Miura ◽  
A Polimeni ◽  
S.T Stoddart ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Field ◽  
High Index ◽  
Self Assembled

scholarly journals InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

2014 ◽  
Vol 29 (7) ◽  
pp. 075011 ◽  
Author(s):  
Q Lu ◽  
Q Zhuang ◽  
A Marshall ◽  
M Kesaria ◽  
R Beanland ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Spectral Range ◽  
Buffer Layers ◽  
Mid Infrared ◽  
Infrared Spectral Range ◽  
Gaas Substrates ◽  
Infrared Spectral

Spin-Cast Deposition of CdSe-CdS Core-Shell Colloidal Quantum Dots on Doped GaAs Substrates: Structural and Optical Characterization

2007 ◽  
Vol 6 (4) ◽  
pp. 413-420 ◽  
Author(s):  
Adrienne D. Stiff-Roberts ◽  
Wanming Zhang ◽  
Jian Xu ◽  
Hongying Peng ◽  
Henry O. Everitt
Keyword(s):  
Quantum Dots ◽  
Optical Characterization ◽  
Colloidal Quantum Dots ◽  
Core Shell ◽  
Gaas Substrates

scholarly journals Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001) GaAs substrates

2002 ◽  
Vol 81 (27) ◽  
pp. 5147-5149 ◽  
Author(s):  
Hyo Jin Kim ◽  
Junichi Motohisa ◽  
Takashi Fukui
Keyword(s):  
Quantum Dots ◽  
Double Row ◽  
Gaas Substrates ◽  
Self Assembled

Growth of InAs quantum dots on vicinal GaAs substrates by molecular beam epitaxy

2016 ◽  
Vol 451 ◽  
pp. 79-82
Author(s):  
Nicholas Weir ◽  
Ruizhe Yao ◽  
Chi-Sen Lee ◽  
Wei Guo
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Gaas Substrates
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