Analysis of Within-Die Complementary Metal–Oxide–Semiconductor Process Variation with Reconfigurable Ring Oscillator Arrays Using HiSIM

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DE05
Author(s):  
Tania Ansari ◽  
Wataru Imafuku ◽  
Akio Kawabata ◽  
Masahiro Yasuda ◽  
Tetsushi Koide ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Process Variation ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Oscillator Arrays ◽  
Semiconductor Process

A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction

2017 ◽  
Vol 9 (15) ◽  
pp. 13262-13268 ◽  
Author(s):  
Fabian Ambriz-Vargas ◽  
Gitanjali Kolhatkar ◽  
Maxime Broyer ◽  
Azza Hadj-Youssef ◽  
Rafik Nouar ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Ferroelectric Tunnel Junction ◽  
Semiconductor Process

Magnetotransistors sensitive to a magnetic field applied in two different directions

1991 ◽  
Vol 69 (3-4) ◽  
pp. 170-173
Author(s):  
M. Doan ◽  
Lj. Ristic
Keyword(s):  
Magnetic Field ◽  
Metal Oxide ◽  
Basic Principle ◽  
Magnetic Induction ◽  
Linear Response ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Base Region ◽  
Semiconductor Process

A lateral magnetotransistor that is sensitive to a magnetic field applied either parallel or perpendicular to the chip's surface is reported. It is fabricated using the standard complementary metal oxide semiconductor process. The deflection of the carriers in the base region is considered as the basic principle of operation. The device shows a linear response to a magnetic field in both directions. The minimum magnetic induction to be detected is in the order of 10 μT at f = 1 kHz.

Formation of cobalt silicide spikes in 0.18 μm complementary metal oxide semiconductor process

2001 ◽  
Vol 78 (20) ◽  
pp. 3091-3093 ◽  
Author(s):  
J. Y. Dai ◽  
Z. R. Guo ◽  
S. F. Tee ◽  
C. L. Tay ◽  
Eddie Er ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cobalt Silicide ◽  
Semiconductor Process

Fabrication of Submicron IrO2Nanowire Array Biosensor Platform by Conventional Complementary Metal–Oxide–Semiconductor Process

2008 ◽  
Vol 47 (2) ◽  
pp. 1147-1151 ◽  
Author(s):  
Fengyan Zhang ◽  
Bruce Ulrich ◽  
Ravi K. Reddy ◽  
Vinu L. Venkatraman ◽  
Shalini Prasad ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Array Biosensor ◽  
Semiconductor Process

1.2–17.6 GHz Ring-Oscillator-Based Phase-Locked Loop with Injection Locking in 65 nm Complementary Metal Oxide Semiconductor

2012 ◽  
Vol 51 (2) ◽  
pp. 02BE03
Author(s):  
Sang-yeop Lee ◽  
Hiroyuki Ito ◽  
Shuhei Amakawa ◽  
Satoru Tanoi ◽  
Noboru Ishihara ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Phase Locked Loop ◽  
Metal Oxide Semiconductor ◽  
Injection Locking ◽  
Ring Oscillator ◽  
Oxide Semiconductor

scholarly journals Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process

2014 ◽  
Vol 22 (1) ◽  
pp. 399 ◽  
Author(s):  
G. Capellini ◽  
C. Reich ◽  
S. Guha ◽  
Y. Yamamoto ◽  
M. Lisker ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Process
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