1.2–17.6 GHz Ring-Oscillator-Based Phase-Locked Loop with Injection Locking in 65 nm Complementary Metal Oxide Semiconductor

2012 ◽  
Vol 51 (2) ◽  
pp. 02BE03
Author(s):  
Sang-yeop Lee ◽  
Hiroyuki Ito ◽  
Shuhei Amakawa ◽  
Satoru Tanoi ◽  
Noboru Ishihara ◽  
...  
2012 ◽  
Vol 51 (2S) ◽  
pp. 02BE03 ◽  
Author(s):  
Sang-yeop Lee ◽  
Hiroyuki Ito ◽  
Shuhei Amakawa ◽  
Satoru Tanoi ◽  
Noboru Ishihara ◽  
...  

2019 ◽  
Vol 8 (2) ◽  
pp. 5343-5347

This paper is based on the results obtained from CMOS based three stage ring oscillator with and without using the memristor. After analyzing, the results obtained from memristor based oscillator are better in terms of frequency, leakage current and leakage power. Also a brief overview about the memristor is given, whose characteristics lies among resistance, inductance and capacitance.


2019 ◽  
Vol 15 (1) ◽  
pp. 64-75
Author(s):  
Fredrick Angelo R. Galapon ◽  
Mark Allen D. C. Agaton ◽  
Arcel G. Leynes ◽  
Lemuel Neil M. Noveno ◽  
Anastacia B. Alvarez ◽  
...  

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