Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.08jb14 ◽

2013 ◽

Vol 52 (8S) ◽

pp. 08JB14 ◽

Author(s):

Tomohiro Doi ◽

Yoshio Honda ◽

Masahito Yamaguchi ◽

Hiroshi Amano

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Multi Quantum Well

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New structure by selective regrowth in multi-quantum well laser diodes performed by low pressure metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91155-x ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 866-874 ◽

Author(s):

Nobuyuki Otsuka ◽

Masahiro Kito ◽

Yoshihiro Mori ◽

Masato Ishino ◽

Yasushi Matsui

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Laser Diodes ◽

Low Pressure ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Laser ◽

Multi Quantum Well

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High quality compressively strained InP-based GaInAs(P)/GaInAsP multi-quantum well laser structures grown by metalorganic vapor phase epitaxy

Journal of Electronic Materials ◽

10.1007/bf02655250 ◽

1994 ◽

Vol 23 (2) ◽

pp. 81-85 ◽

Author(s):

S. D. Perrin ◽

C. P. Seltzer ◽

P. C. Spurdens

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Quality ◽

Quantum Well Laser ◽

Multi Quantum Well

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Low-threshold strained multi-quantum well lasers fabricated by selective metalorganic vapor phase epitaxy without a semiconductor etching process

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00524-6 ◽

1997 ◽

Vol 170 (1-4) ◽

pp. 456-460 ◽

Author(s):

Y. Sakata ◽

T. Morimoto ◽

Y. Inomoto ◽

H. Hasumi

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Etching Process ◽

Quantum Well Lasers ◽

Semiconductor Etching ◽

Low Threshold ◽

Multi Quantum Well

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Growth of BGaN/AlGaN multi-quantum-well structure by metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(00)00717-x ◽

2000 ◽

Vol 221 (1-4) ◽

pp. 378-381 ◽

Author(s):

Makoto Kurimoto ◽

Takayoshi Takano ◽

Jun Yamamoto ◽

Yoshiyuki Ishihara ◽

Masato Horie ◽

...

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Structure ◽

Multi Quantum Well

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Metalorganic vapor phase epitaxy growth of InGaAsP multi quantum well laser diodes using entirely organic sources

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91158-4 ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 886-891 ◽

Author(s):

M. Horita ◽

M. Tsurusawa ◽

K. Utaka ◽

Y. Matsushima

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Laser Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Laser ◽

Multi Quantum Well

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Low threshold λ = 1.3 μm multi-quantum well laser diodes grown by metalorganic vapor phase epitaxy using tertiarybutylarsine and tertiarybutylphosphine precursors

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91153-3 ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 852-857 ◽

Author(s):

S. Ae ◽

T. Terakado ◽

T. Nakamura ◽

T. Torikai ◽

T. Uji

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Laser Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Laser ◽

Low Threshold ◽

Multi Quantum Well

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Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.08.097 ◽

2004 ◽

Vol 272 (1-4) ◽

pp. 333-340 ◽

Author(s):

Y.D. Qi ◽

H. Liang ◽

W. Tang ◽

Z.D. Lu ◽

Kei May Lau

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Dual Wavelength ◽

Multi Quantum Well

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Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2003.10.082 ◽

2004 ◽

Vol 262 (1-4) ◽

pp. 145-150 ◽

Author(s):

V. Potin ◽

E. Hahn ◽

A. Rosenauer ◽

D. Gerthsen ◽

B. Kuhn ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Vapor Phase ◽

Molecular Beam ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Structures

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Sb Surfactant Effect on Defect Evolution in Compressively Strained In0.80Ga0.20As Quantum Well on InP Grown by Metalorganic Vapor Phase Epitaxy

Applied Physics Express ◽

10.1143/apex.1.111202 ◽

2008 ◽

Vol 1 ◽

pp. 111202 ◽

Author(s):

Tomonari Sato ◽

Yasuhiro Kondo ◽

Takashi Sekiguchi ◽

Takashi Suemasu

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Surfactant Effect ◽

Defect Evolution

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Low Temperature Growth of GaAs and InAs/GaAs Quantum Well on (111)B Substrate by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.l930 ◽

1996 ◽

Vol 35 (Part 2, No. 7B) ◽

pp. L930-L932 ◽

Author(s):

Toshio Nishida ◽

Naoki Kobayashi

Keyword(s):

Low Temperature ◽

Quantum Well ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Temperature Growth ◽

Low Temperature Growth

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