Low threshold λ = 1.3 μm multi-quantum well laser diodes grown by metalorganic vapor phase epitaxy using tertiarybutylarsine and tertiarybutylphosphine precursors

1994 ◽  
Vol 145 (1-4) ◽  
pp. 852-857 ◽  
Author(s):  
S. Ae ◽  
T. Terakado ◽  
T. Nakamura ◽  
T. Torikai ◽  
T. Uji
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Laser Diodes ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Laser ◽  
Low Threshold ◽  
Multi Quantum Well

Growth of BGaN/AlGaN multi-quantum-well structure by metalorganic vapor phase epitaxy

2000 ◽  
Vol 221 (1-4) ◽  
pp. 378-381 ◽  
Author(s):  
Makoto Kurimoto ◽  
Takayoshi Takano ◽  
Jun Yamamoto ◽  
Yoshiyuki Ishihara ◽  
Masato Horie ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Structure ◽  
Multi Quantum Well
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