High quality compressively strained InP-based GaInAs(P)/GaInAsP multi-quantum well laser structures grown by metalorganic vapor phase epitaxy

1994 ◽  
Vol 23 (2) ◽  
pp. 81-85 ◽  
Author(s):  
S. D. Perrin ◽  
C. P. Seltzer ◽  
P. C. Spurdens
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Quantum Well Laser ◽  
Multi Quantum Well

Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1961-1965 ◽  
Author(s):  
Akihiko Ishibashi ◽  
Hidemi Takeishi ◽  
Nobuyuki Uemura ◽  
Masahiro Kume ◽  
Yasufumi Yabuuchi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well ◽  
Quantum Well Structure

Growth of BGaN/AlGaN multi-quantum-well structure by metalorganic vapor phase epitaxy

2000 ◽  
Vol 221 (1-4) ◽  
pp. 378-381 ◽  
Author(s):  
Makoto Kurimoto ◽  
Takayoshi Takano ◽  
Jun Yamamoto ◽  
Yoshiyuki Ishihara ◽  
Masato Horie ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Structure ◽  
Multi Quantum Well
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