Improving source/drain contact resistance of amorphous indium–gallium–zinc-oxide thin-film transistors using an n+-ZnO buffer layer
2016 ◽
Vol 55
(6S1)
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pp. 06GG05
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2009 ◽
Vol 3
(7-8)
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pp. 239-241
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2011 ◽
Vol 5
(10-11)
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pp. 403-405
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Keyword(s):
2015 ◽
Vol 16
(3)
◽
pp. 139-141
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2015 ◽
Vol 135
(6)
◽
pp. 192-198
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Keyword(s):
Keyword(s):
Keyword(s):
2011 ◽
Vol 50
(3)
◽
pp. 03CB06
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Keyword(s):
Keyword(s):
2014 ◽
Vol 53
(4S)
◽
pp. 04EF07
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