Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates: Metal work function dependence of Schottky barrier height

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FG13 ◽  
Author(s):  
Hiroyoshi Imadate ◽  
Tomoyoshi Mishima ◽  
Kenji Shiojima
2011 ◽  
Author(s):  
Shammi Verma ◽  
D. Kabiraj ◽  
T. Kumar ◽  
Sandeep Kumar ◽  
D. Kanjilal ◽  
...  

Nanoscale ◽  
2018 ◽  
Vol 10 (1) ◽  
pp. 319-327 ◽  
Author(s):  
Jenifer R. Hajzus ◽  
Adam J. Biacchi ◽  
Son T. Le ◽  
Curt A. Richter ◽  
Angela R. Hight Walker ◽  
...  

Four different metals were patterned onto individual, solution-synthesized SnS nanoribbons to determine Schottky barrier heights and specific contact resistances.


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