The effect of Al segregation on Schottky barrier height and effective work function in TiAl/TiN/HfO2gate stacks

2016 ◽  
Vol 49 (27) ◽  
pp. 275104 ◽  
Author(s):  
Geun-Myeong Kim ◽  
Young Jun Oh ◽  
K J Chang
2006 ◽  
Vol 527-529 ◽  
pp. 923-926 ◽  
Author(s):  
Masataka Satoh ◽  
H. Matsuo

The Schottky barrier height (SBH) of Al, Ti, Au, and Ni contacts to n- and p-type 3C-SiC is investigated by means of I-V and C-V measurements. All metal contacts to n- (net donor concentration: 1.0 x 1016 /cm3) and p-type (net acceptor concentration: 4 x 1016 /cm3) 3C-SiC show the rectifying I-V characteristics except for Al contact to n-type 3C-SiC. Only Al contact to n-type 3C-SiC shows the ohmic characteristics. As the work function of metal is increased from 4.3 (Ti) to 5.2 (Ni) eV, SBH for n-type 3C-SiC is increased from 0.4 to 0.7 eV and SBH for p-type 3C-SiC is decreased from 2.2 to 1.8 eV. The small change of SBH for 3C-SiC may be correlated to the crystal orientation and the defects on the surface of 3C-SiC.


2010 ◽  
Vol 97 (23) ◽  
pp. 232104 ◽  
Author(s):  
T. Jaouen ◽  
G. Jézéquel ◽  
G. Delhaye ◽  
B. Lépine ◽  
P. Turban ◽  
...  

2011 ◽  
Author(s):  
Shammi Verma ◽  
D. Kabiraj ◽  
T. Kumar ◽  
Sandeep Kumar ◽  
D. Kanjilal ◽  
...  

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