Lateral Solid Phase Epitaxy of Amorphous Si Films onto Non-planar SiO2 Patterns

Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure

10.7567/ssdm.1992.a-1-4 ◽

1992 ◽

Author(s):

H. Ishiwara ◽

H. Wakabayashi ◽

K. Miyazaki ◽

K. Fukao ◽

A. Sawaoka

Keyword(s):

Solid Phase ◽

Ultrahigh Pressure ◽

Solid Phase Epitaxy ◽

Amorphous Si ◽

Si Films

Download Full-text

Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films

Japanese Journal of Applied Physics ◽

10.1143/jjap.24.l513 ◽

1985 ◽

Vol 24 (Part 2, No. 7) ◽

pp. L513-L515 ◽

Cited By ~ 10

Author(s):

Hiroshi Ishiwara ◽

Akihiro Tamba ◽

Hiroshi Yamamoto ◽

Seijiro Furukawa

Keyword(s):

Solid Phase ◽

Boron Doping ◽

Solid Phase Epitaxy ◽

Doping Effects ◽

Amorphous Si ◽

Si Films

Download Full-text

Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2patterns on Si substrates

Applied Physics Letters ◽

10.1063/1.96717 ◽

1986 ◽

Vol 48 (12) ◽

pp. 773-775 ◽

Cited By ~ 15

Author(s):

Hiroshi Ishiwara ◽

Akihiro Tamba ◽

Seijiro Furukawa

Keyword(s):

Solid Phase ◽

Solid Phase Epitaxy ◽

Si Substrates ◽

Amorphous Si ◽

Si Films

Download Full-text

Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

MRS Proceedings ◽

10.1557/proc-25-511 ◽

1983 ◽

Vol 25 ◽

Cited By ~ 2

Author(s):

H. Yamamoto ◽

H. Ishiwara ◽

S. Furukawa ◽

M. Tamura ◽

T. Tokuyama

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Ion Implantation ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Si Substrates ◽

Transmission Electron ◽

Amorphous Si ◽

Si Films ◽

Kinetics Of

ABSTRACTLateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

Download Full-text

Growth Conditions of Evaporated Amorphous Si Films onto SiO2, Patterns by Lateral Solid Phase Epitaxy

10.7567/ssdm.1983.a-3-2 ◽

1983 ◽

Author(s):

Hiroshi Yamamoto ◽

Hiroshi Ishiwara ◽

Seijiro Furukawa ◽

Masao Tamura ◽

Takashi Tokuyama

Keyword(s):

Solid Phase ◽

Growth Conditions ◽

Solid Phase Epitaxy ◽

Amorphous Si ◽

Si Films

Download Full-text

Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.308 ◽

1993 ◽

Vol 32 (Part 1, No. 1B) ◽

pp. 308-311 ◽

Cited By ~ 7

Author(s):

Hiroshi Ishiwara ◽

Hitoshi Wakabayashi ◽

Keizo Miyazaki ◽

Kazuichi Fukao ◽

Akira Sawaoka

Keyword(s):

Solid Phase ◽

Ultrahigh Pressure ◽

Solid Phase Epitaxy ◽

Amorphous Si ◽

Si Films

Download Full-text

Competition Between Solid Phase Epitaxy and Random Crystallization During cw Laser Annealing of Amorphous Si Films

MRS Proceedings ◽

10.1557/proc-4-169 ◽

1981 ◽

Vol 4 ◽

Cited By ~ 6

Author(s):

J.A. Roth ◽

S.A. Kokorowski ◽

G.L. Olson ◽

L.D. Hess

Keyword(s):

Laser Annealing ◽

Volume Fraction ◽

Solid Phase ◽

Rapid Heating ◽

Film Deposition ◽

Solid Phase Epitaxy ◽

Laser Crystallization ◽

Amorphous Si ◽

Si Films ◽

Kinetics Of

ABSTRACTThe kinetics of amorphous-to-polycrystalline conversion and solid phase epitaxy (SPE) in UHV-deposited Si films have been determined over a wide temperature range by the use of optical reflectivity measurements made during rapid heating by a cw Ar laser. Crystallization rates measured in UHV following film deposition are reported and compared to rates measured in air in order to elucidate the effects of contaminants on the processes. The effects of boron doping on nucleation and growth kinetics are also reported. The crystallization rates determined in these studies can be used to predict the volume fraction of polycrystalline material formed during laserinduced SPE growth of thick epitaxial layers.

Download Full-text