Competition Between Solid Phase Epitaxy and Random Crystallization During cw Laser Annealing of Amorphous Si Films

1981 ◽  
Vol 4 ◽  
Author(s):  
J.A. Roth ◽  
S.A. Kokorowski ◽  
G.L. Olson ◽  
L.D. Hess
Keyword(s):  
Laser Annealing ◽  
Volume Fraction ◽  
Solid Phase ◽  
Rapid Heating ◽  
Film Deposition ◽  
Solid Phase Epitaxy ◽  
Laser Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Kinetics Of

ABSTRACTThe kinetics of amorphous-to-polycrystalline conversion and solid phase epitaxy (SPE) in UHV-deposited Si films have been determined over a wide temperature range by the use of optical reflectivity measurements made during rapid heating by a cw Ar laser. Crystallization rates measured in UHV following film deposition are reported and compared to rates measured in air in order to elucidate the effects of contaminants on the processes. The effects of boron doping on nucleation and growth kinetics are also reported. The crystallization rates determined in these studies can be used to predict the volume fraction of polycrystalline material formed during laserinduced SPE growth of thick epitaxial layers.

Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

1983 ◽  
Vol 25 ◽  
Author(s):  
H. Yamamoto ◽  
H. Ishiwara ◽  
S. Furukawa ◽  
M. Tamura ◽  
T. Tokuyama
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Si Films ◽  
Kinetics Of

ABSTRACTLateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

1990 ◽  
Vol 57 (13) ◽  
pp. 1340-1342 ◽  
Author(s):  
J. A. Roth ◽  
G. L. Olson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Kinetics Of

Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates

MRS Bulletin ◽  
2006 ◽  
Vol 31 (6) ◽  
pp. 461-465 ◽  
Author(s):  
P.C. van der Wilt ◽  
M.G. Kane ◽  
A.B. Limanov ◽  
A.H. Firester ◽  
L. Goodman ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Defect Density ◽  
Solid Phase ◽  
Flexible Substrates ◽  
Full Potential ◽  
Laser Crystallization ◽  
Silicon Thin Film ◽  
Excimer Laser Annealing ◽  
Si Films

AbstractLow-defect-density polycrystalline Si on flexible substrates can be instrumental in realizing the full potential of macroelectronics. Direct deposition or solid-phase crystallization techniques are often incompatible with polymers and produce materials with high defect densities. Excimer-laser annealing is capable of producing films of reasonable quality directly on polymer and metallic substrates. Sequential lateral solidification (SLS) is an advanced pulsed-laser-crystallization technique capable of producing Si films on polymers with lower defect density than can be obtained via excimer-laser annealing. Circuits built directly on polymers using these SLS films show the highest performance reported to date.

Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure

1992 ◽  
Author(s):  
H. Ishiwara ◽  
H. Wakabayashi ◽  
K. Miyazaki ◽  
K. Fukao ◽  
A. Sawaoka
Keyword(s):  
Solid Phase ◽  
Ultrahigh Pressure ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Si Films

Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films

1985 ◽  
Vol 24 (Part 2, No. 7) ◽  
pp. L513-L515 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Akihiro Tamba ◽  
Hiroshi Yamamoto ◽  
Seijiro Furukawa
Keyword(s):  
Solid Phase ◽  
Boron Doping ◽  
Solid Phase Epitaxy ◽  
Doping Effects ◽  
Amorphous Si ◽  
Si Films

Lateral Solid Phase Epitaxy of Amorphous Si Films onto Non-planar SiO2 Patterns

1985 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Akihiro Tamba ◽  
Seijiro Furukawa
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Si Films

Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2patterns on Si substrates

1986 ◽  
Vol 48 (12) ◽  
pp. 773-775 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Akihiro Tamba ◽  
Seijiro Furukawa
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Amorphous Si ◽  
Si Films

Kinetics of Intrinsic and Dopant-Enhanced Solid Phase Epitaxy in Buried Amorphous Si Layers

1996 ◽  
Vol 439 ◽  
Author(s):  
J. C. McCallum
Keyword(s):  
Ion Implantation ◽  
Dopant Concentration ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Entire Concentration Range ◽  
Time Resolved ◽  
Amorphous Si ◽  
First Time ◽  
Kinetics Of ◽  
Suitable Environment

AbstractThe kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) have been measured in buried amorphous Si (a-Si) layers produced by ion implantation. Buried a-Si layers formed by self-ion implantation provide a suitable environment for studies of the intrinsic growth kinetics of amorphous Si, free from the rate-retarding effects of H. For the first time, dopant-enhanced SPE rates have been measured under these H-free conditions. Buried a-Si layers containing uniform As concentration profiles ranging from 1–16.1 × 1019 As.cm−3 were produced by multiple-energy ion implantation and time resolved reflectivity was used to measure SPE rates over the temperature range 480–660°C. In contrast to earlier studies, the dopant-enhanced SPE rate is found to depend linearly on the As concentration over the entire concentration range measured. The SPE rate can be expressed in the form, v/vi(T) = 1 + N/[No exp(-ΔE/kT)], where vi(T) is the intrinsic SPE rate, N is the dopant concentration and No = 1.2 × 1021 cm−3, ΔE = 0.21 eV.

Process and Mechanism of CoSi2/Si Solid Phase Epitaxy by Multilayer Reaction

1999 ◽  
Vol 580 ◽  
Author(s):  
Bing-Zong Li ◽  
Xin-Ping Qu ◽  
Guo-Ping Ru ◽  
Ning Wang ◽  
Paul Chu
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Solid Phase Epitaxy ◽  
Initial Stage ◽  
Vital Effect ◽  
Amorphous Si ◽  
Kinetics Of ◽  
State Amorphization

AbstractA multilayer structure of Co/a-Si/Ti/Si(100) together with Co/Ti/Si(100) is applied to investigate the process and mechanism of CoSi2 epitaxial growth on a Si(100) substrate. The experimental results show that by adding an amorphous Si layer with a certain thickness, the epitaxial quality of CoSi2 is significantly improved. A multi-element amorphous layer is formed by a solid state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si and limits the supply of Co atoms. It has a vital effect on the multilayer reaction kinetics, and the epitaxial growth of CoSi2 on Si. The kinetics of the CoSi2 growth process from multilayer reactions is investigated.

Growth Conditions of Evaporated Amorphous Si Films onto SiO2, Patterns by Lateral Solid Phase Epitaxy

1983 ◽  
Author(s):  
Hiroshi Yamamoto ◽  
Hiroshi Ishiwara ◽  
Seijiro Furukawa ◽  
Masao Tamura ◽  
Takashi Tokuyama
Keyword(s):  
Solid Phase ◽  
Growth Conditions ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Si Films
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